QUANTUM DOT, METHOD OF MANUFACTURING QUANTUM DOT, OPTICAL MEMBER INCLUDING QUANTUM DOT, AND ELECTRONIC APPARATUS INCLUDING QUANTUM DOT: abstract simplified (18133383)

• This abstract for appeared for patent application number 18133383 Titled 'QUANTUM DOT, METHOD OF MANUFACTURING QUANTUM DOT, OPTICAL MEMBER INCLUDING QUANTUM DOT, AND ELECTRONIC APPARATUS INCLUDING QUANTUM DOT'

Simplified Explanation

The abstract describes an electronic device that contains a quantum dot. The quantum dot consists of a core made up of indium, gallium, and phosphorus, and a shell that covers part of the core. The shell can be made of a group II-VI semiconductor compound, a group III-V semiconductor compound, a group III-VI semiconductor compound, or a combination of these materials. The ratio of gallium to the total amount of indium and gallium in the core (M/(M+M)) is between 0.02 and 0.18, and the ratio of the total amount of indium and gallium to the amount of phosphorus in the core and shell ((M+M)/M) is between 1 and 1.2.

Original Abstract Submitted

An electronic apparatus including the quantum dot, wherein the quantum dot may include a core and a shell covering at least a portion of the core, wherein the core may include indium (In), gallium (Ga), and phosphorus (P), the shell may include a group II-VI semiconductor compound, a group III-V semiconductor compound, a group III-VI semiconductor compound, or a combination thereof, in the core and the shell, the number of moles of Ga relative to the sum of the number of moles of In and the number of moles of Ga (M/(M+M)) may be in a range of about 0.02 to about 0.18, and in the core and the shell, the sum of the number of moles of In and the number of moles of Ga relative to the number of moles of P ((M+M)/M) may be in a range of about 1 to about 1.2.