PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN: abstract simplified (18208794)

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  • This abstract for appeared for patent application number 18208794 Titled 'PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN'

Simplified Explanation

The abstract describes a method for creating a pattern on a photoresist layer. The process involves applying a photoresist layer onto a substrate and then selectively exposing it to actinic radiation, which creates a hidden pattern. This latent pattern is then developed by applying a developer, resulting in a visible pattern. The photoresist layer used in this method contains a polymer.


Original Abstract Submitted

Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer:

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