Mitsubishi electric corporation (20240136399). SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing methods of shortening routing lengths in electronic devices?
- 1.11 What specific electronic devices could benefit the most from this technology?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Organization Name
mitsubishi electric corporation
Inventor(s)
Kazuhiro Kawahara of Tokyo (JP)
Kosuke Yamaguchi of Tokyo (JP)
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136399 titled 'SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Simplified Explanation
The technology described in the patent application aims to shorten the routing length of a gate wire connecting a control IC to first and second semiconductor elements that are connected in parallel. This is achieved by arranging the first and second semiconductor elements in a specific orientation and positioning the gate pad on one side of the first semiconductor element and on the other side of the second semiconductor element.
- The first and second semiconductor elements are placed so that the long side of the first semiconductor element faces a side of the second semiconductor element.
- The control IC, first semiconductor element, and second semiconductor element are arranged in a specific order in a direction orthogonal to a first direction.
- The gate pad is located on one side of the first semiconductor element in the first direction, and on the other side of the second semiconductor element in the first direction.
Potential Applications
This technology could be applied in the manufacturing of electronic devices where space optimization and efficient routing of gate wires are crucial.
Problems Solved
This technology solves the problem of long routing lengths of gate wires connecting control ICs to semiconductor elements in parallel, which can lead to inefficiencies and increased signal delays.
Benefits
The main benefit of this technology is the ability to shorten routing lengths, leading to improved performance and efficiency in electronic devices.
Potential Commercial Applications
Potential commercial applications of this technology include the production of high-performance electronic devices such as smartphones, tablets, and computers.
Possible Prior Art
There is no prior art known at this time.
Unanswered Questions
How does this technology compare to existing methods of shortening routing lengths in electronic devices?
This article does not provide a direct comparison to existing methods, leaving the reader to wonder about the advantages and disadvantages of this new technology.
What specific electronic devices could benefit the most from this technology?
The article does not specify which electronic devices could benefit the most from this technology, leaving the reader to speculate on potential applications.
Original Abstract Submitted
the object is to provide a technology that can shorten a routing length of a gate wire connecting a control ic that controls driving first and second semiconductor elements that are connected in parallel with each other, to a gate pad of one of the first and second semiconductor elements disposed distant from the control ic. a first semiconductor element and a second semiconductor element are disposed so that a long side of the first semiconductor element faces a side of the second semiconductor element, and a hvic or a lvic, the first semiconductor element, and the second semiconductor element are disposed in this order in a direction orthogonal to a first direction, the gate pad is disposed on the first semiconductor element on one side in the first direction, and the gate pad is disposed on the second semiconductor element on the other side in the first direction.
