Micron technology, inc. (20240128396). LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING simplified abstract

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LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING

Organization Name

micron technology, inc.

Inventor(s)

Zaiyuan Ren of Boise ID (US)

Thomas Gehrke of Boise ID (US)

LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128396 titled 'LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING

Simplified Explanation

The abstract of the patent application describes a method for forming light emitting diodes (LEDs) with n-polarity on a substrate by creating a nitrogen-rich environment without forming a nitrodizing product on the surface of the substrate.

  • LED structure with nitrogen polarity formed on a substrate with a nitrogen-rich environment
  • Method involves creating a nitrogen-rich environment near the substrate surface
  • No nitrodizing product formed on the substrate surface

Potential Applications

The technology could be applied in:

  • LED lighting
  • Display technology
  • Optoelectronic devices

Problems Solved

This technology addresses:

  • Improving LED performance
  • Enhancing efficiency of LED devices
  • Facilitating manufacturing processes

Benefits

The benefits of this technology include:

  • Higher efficiency LEDs
  • Improved performance of optoelectronic devices
  • Simplified manufacturing processes

Potential Commercial Applications

The technology could be commercially applied in:

  • LED manufacturing industry
  • Display technology sector
  • Optoelectronic device production

Possible Prior Art

One possible prior art could be the use of different materials or methods to enhance LED performance, but the specific approach of creating a nitrogen-rich environment without forming a nitrodizing product may be novel.

Unanswered Questions

How does this method compare to existing techniques for forming LEDs?

The article does not provide a direct comparison to existing techniques for forming LEDs. It would be interesting to know how this method stacks up against traditional methods in terms of efficiency and cost-effectiveness.

What are the potential limitations or challenges of implementing this technology on a larger scale?

The article does not address any potential limitations or challenges of implementing this technology on a larger scale. It would be important to understand any obstacles that may arise when scaling up production or application of this method.


Original Abstract Submitted

light emitting diodes (“leds”) with n-polarity and associated methods of manufacturing are disclosed herein. in one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. the method also includes forming an led structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.