Micron technology, inc. (20240128158). TSV-BUMP STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING THE SAME simplified abstract

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TSV-BUMP STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING THE SAME

Organization Name

micron technology, inc.

Inventor(s)

YUTAKA Nakae of Hiroshima (JP)

NOBUYUKI Nakamura of Hiroshima (JP)

TSV-BUMP STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128158 titled 'TSV-BUMP STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING THE SAME

Simplified Explanation

The abstract describes a through-silicon via (TSV)-bump structure, which includes a TSV in a semiconductor substrate and a bump on the TSV. The bump consists of a conductive plug portion and a step structure portion under the conductive plug portion, designed to electrically couple the TSV and the conductive plug portion.

  • TSV-bump structure:
   * TSV in semiconductor substrate
   * Bump on TSV
   * Bump includes conductive plug portion and step structure portion
   * Step structure electrically couples TSV and conductive plug portion

Potential Applications

The TSV-bump structure can be used in:

  • Advanced semiconductor packaging
  • High-performance computing systems
  • 3D integrated circuits

Problems Solved

The TSV-bump structure addresses:

  • Improving electrical connections in semiconductor devices
  • Enhancing signal transmission efficiency
  • Reducing signal interference

Benefits

The TSV-bump structure offers:

  • Increased data transfer speeds
  • Enhanced reliability of semiconductor devices
  • Compact design for space-saving applications

Potential Commercial Applications

The TSV-bump structure can be applied in:

  • Telecommunications equipment
  • Automotive electronics
  • Consumer electronics

Possible Prior Art

One possible prior art could be the use of traditional wire bonding techniques in semiconductor packaging. Another could be the use of flip-chip technology for interconnecting semiconductor devices.

Unanswered Questions

How does the TSV-bump structure impact power consumption in semiconductor devices?

The article does not provide information on the power efficiency of the TSV-bump structure compared to traditional interconnection methods.

What are the potential challenges in manufacturing the TSV-bump structure at scale?

The article does not discuss the scalability and manufacturing challenges that may arise when implementing the TSV-bump structure in mass production.


Original Abstract Submitted

according to one or more embodiments of the disclosure, a through-silicon via (tsv)-bump structure is provide. the tsv-bump structure comprises a tsv in a semiconductor substrate and a bump on the tsv. the bump includes a conductive plug portion and a step structure portion under the conductive plug portion. the step structure is configured to electrically couple the tsv and the conductive plug portion with each other.