Micron technology, inc. (20240126685). DYNAMIC VOLTAGE SUPPLY FOR MEMORY CIRCUIT simplified abstract

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DYNAMIC VOLTAGE SUPPLY FOR MEMORY CIRCUIT

Organization Name

micron technology, inc.

Inventor(s)

Hua Tan of Shanghai (CN)

Junjun Wang of Shanghai (CN)

De Hua Guo of Shanghai (CN)

DYNAMIC VOLTAGE SUPPLY FOR MEMORY CIRCUIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240126685 titled 'DYNAMIC VOLTAGE SUPPLY FOR MEMORY CIRCUIT

Simplified Explanation

The patent application describes methods, systems, and devices for dynamic voltage supply for memory circuits. The apparatus adjusts the supply voltage based on the process corner and temperature of the memory system. It includes a memory array and a controller that transitions the voltage supplied to the controller between different levels based on temperature thresholds.

  • Memory circuit apparatus adjusts supply voltage based on process corner and temperature
  • Includes memory array and controller
  • Controller transitions voltage levels based on temperature thresholds

Potential Applications

This technology could be applied in various memory systems where dynamic voltage adjustments are necessary to optimize performance and power consumption.

Problems Solved

This technology solves the problem of inefficient voltage supply in memory circuits, ensuring optimal performance and energy efficiency under different operating conditions.

Benefits

The benefits of this technology include improved memory system performance, reduced power consumption, and increased reliability by dynamically adjusting the supply voltage based on temperature and process corner.

Potential Commercial Applications

Potential commercial applications of this technology include mobile devices, computers, servers, and other electronic devices that utilize memory circuits and can benefit from dynamic voltage adjustments for improved efficiency.

Possible Prior Art

One possible prior art for this technology could be existing methods for static voltage supply in memory circuits, which may not be as efficient or adaptable to changing operating conditions.

Unanswered Questions

How does this technology compare to existing voltage adjustment methods in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and existing voltage adjustment methods in memory circuits.

What are the potential challenges in implementing this dynamic voltage supply system in memory circuits on a large scale?

This article does not address the potential challenges that may arise in implementing this technology in memory circuits on a large scale.


Original Abstract Submitted

methods, systems, and devices for dynamic voltage supply for memory circuit are described. an apparatus may adjust a supply voltage based on a process corner and a temperature of the memory system. an apparatus may include a memory array and a controller. the controller may determine a first temperature of the apparatus is less than a first temperature threshold at a first time. the controller may transition a voltage supplied to the controller from a first voltage level to a second voltage level based on determining the first temperature is less than the first temperature threshold. the controller may determine a second temperature is greater than a second temperature threshold at a second time. the controller may transition the voltage supplied to the controller from the second voltage level to the first voltage level based on determining the second temperature is greater than the second temperature threshold.