MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE: abstract simplified (17705653)
Jump to navigation
Jump to search
- This abstract for appeared for patent application number 17705653 Titled 'MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE'
Simplified Explanation
The abstract describes a ferroelectric memory device that consists of three main components: a bottom electrode, a ferroelectric structure, and a top electrode. The bottom electrode is made of molybdenum.
Original Abstract Submitted
The present disclosure relates to a ferroelectric memory device that includes a bottom electrode, a ferroelectric structure overlying the bottom electrode, and a top electrode overlying the ferroelectric structure where the bottom electrode includes molybdenum.
