METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE, SEMICONDUCTOR PACKAGE, AND IMAGING APPARATUS: abstract simplified (17746290)

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  • This abstract for appeared for patent application number 17746290 Titled 'METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE, SEMICONDUCTOR PACKAGE, AND IMAGING APPARATUS'

Simplified Explanation

The abstract describes a semiconductor package and a method of manufacturing it, as well as an imaging apparatus. The method involves preparing a substrate with a first connection region and a sensor chip with a second connection region. The first connection region is coated with a bonding layer consisting of multiple layers of nano low-melting-point metal materials with different melting point gradients. The same is done for the second connection region on the sensor chip. The substrate and sensor chip are then aligned and tightly compressed, causing the first and second bonding layers to form a composite structure. This composite structure is then treated at a specific temperature, pressure, and with ultrasonic waves to form a eutectic, which is a mixture of metals with a lower melting point than the individual metals.


Original Abstract Submitted

A semiconductor package and a method of manufacturing the same, and an imaging apparatus are provided. The method includes preparing a substrate having a first connection region and a sensor chip having a second connection region. A first bonding layer including multi-layer nano low-melting-point metal materials with different melting point gradients is provided on the first connection region. A second bonding layer including multi-layer nano low-melting-point metal materials with different melting point gradients is provided on the second connection region. The substrate and the sensor chip are overlapped to align and tightly compress the first and second bonding layers, to obtain a composite structure. The composite structure is treated at a temperature of 30 to 180° C., under a pressure of 1 to 8 MPa, and with an ultrasonic of 10 to 30 kHz to form the first and second bonding layers into a eutectic.

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