METHOD FOR FORMING SEMICONDUCTOR STRUCTURE: abstract simplified (18333100)

• This abstract for appeared for patent application number 18333100 Titled 'METHOD FOR FORMING SEMICONDUCTOR STRUCTURE'

Simplified Explanation

The abstract describes a method for creating a semiconductor structure. It involves the formation of mandrels over a target layer, followed by the creation of openings to remove some of the mandrels. A spacer layer is then formed over the remaining mandrels, and additional mandrels are formed between them. More openings are created to remove some of these second mandrels. The spacer layer and target layer are then etched away.

Original Abstract Submitted

A method for forming a semiconductor structure includes forming first mandrels over a target layer. The method for forming a semiconductor structure also includes forming a first opening to cut off one of the first mandrels. The method for forming a semiconductor structure also includes forming a spacer layer over the first mandrels. The method for forming a semiconductor structure also includes forming second mandrels over the spacer layer and between the first mandrels. The method for forming a semiconductor structure also includes forming a second opening to cut off one of the second mandrels. The method for forming a semiconductor structure also includes etching the spacer layer. The method for forming a semiconductor structure also includes etching the target layer.