View source for METAL GATE MEMORY DEVICE AND METHOD: abstract simplified (17717406)

*This abstract for appeared for patent application  number 17717406 Titled 'METAL GATE MEMORY DEVICE AND METHOD'

==Simplified Explanation==

The abstract describes an invention related to memory devices and systems. It mentions the presence of memory cells and a transistor in the memory device. The memory cells are connected to a number of data lines, which are made of a different metal than the transistor's gate. These data lines directly interface with the transistor's gate.


==Original Abstract Submitted==

Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include an array of memory cells and a transistor located on a periphery of the array of memory cells. A number of data lines are shown coupled to memory cells in the array, wherein the number of data lines extend over a first metal gate of a transistor in the periphery of the array, where the number of data lines are formed from a second metal, and form a direct interface with the first metal gate.