METAL GATE MEMORY DEVICE AND METHOD: abstract simplified (17717406)

• This abstract for appeared for patent application number 17717406 Titled 'METAL GATE MEMORY DEVICE AND METHOD'

Simplified Explanation

The abstract describes an invention related to memory devices and systems. It mentions the presence of memory cells and a transistor in the memory device. The memory cells are connected to a number of data lines, which are made of a different metal than the transistor's gate. These data lines directly interface with the transistor's gate.

Original Abstract Submitted

Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include an array of memory cells and a transistor located on a periphery of the array of memory cells. A number of data lines are shown coupled to memory cells in the array, wherein the number of data lines extend over a first metal gate of a transistor in the periphery of the array, where the number of data lines are formed from a second metal, and form a direct interface with the first metal gate.