MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE: abstract simplified (18188821)

• This abstract for appeared for patent application number 18188821 Titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE'

Simplified Explanation

This abstract describes a manufacturing method for a semiconductor device. The method involves creating a gas vent recess in a compound semiconductor substrate, which has multiple device regions. An altered layer is then formed inside the substrate using a laser beam, extending along the surface at a specific depth corresponding to the gas vent recess. The substrate is then divided into two parts, with one part including the surface and the other part including the opposite surface. Finally, a metal film is applied to cover the divided surface of the first part, while leaving the gas vent recess exposed.

Original Abstract Submitted

A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.