Kioxia corporation (20240099021). MAGNETIC MEMORY DEVICE simplified abstract
Contents
- 1 MAGNETIC MEMORY DEVICE
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099021 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation
The patent application describes a magnetic memory device with specific features such as lower insulating layer, conductive portions, memory cells, magnetoresistance effect elements, switching elements, and bottom electrodes.
- Lower insulating layer
- First and second conductive portions
- First and second memory cells
- Magnetoresistance effect elements
- Switching elements
- Bottom electrodes
- Void under a region between memory cells
Potential Applications
The technology can be applied in:
- Data storage devices
- Magnetic sensors
- Non-volatile memory systems
Problems Solved
The technology addresses issues related to:
- Memory cell density
- Data retention
- Energy efficiency
Benefits
The benefits of this technology include:
- Higher memory density
- Faster data access
- Lower power consumption
Potential Commercial Applications
The technology can be utilized in:
- Consumer electronics
- Automotive systems
- Industrial automation
Possible Prior Art
One possible prior art is the use of magnetoresistance effect elements in memory devices.
Unanswered Questions
How does this technology compare to existing magnetic memory devices in terms of performance and reliability?
This article does not provide a direct comparison with existing magnetic memory devices, so it is unclear how this technology stacks up in terms of performance and reliability.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges in scaling up production of this technology for commercial applications, leaving a gap in understanding the feasibility of mass production.
Original Abstract Submitted
according to one embodiment, a magnetic memory device includes a lower insulating layer, first and second conductive portions provided in the lower insulating layer, first and second memory cells provided on the lower insulating layer and on the respective first and second conductive portions, and each including a magnetoresistance effect element, a switching element and a bottom electrode connected to corresponding one of the first and second conductive portions. as viewed from a third direction, a width of each of the first and second conductive portions is less than a width of a corresponding bottom electrode. the lower insulating layer has a void under a region between the first and second memory cells.
