Kioxia corporation (20240099020). MEMORY DEVICE simplified abstract
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Takeshi Iwasaki of Kuwana Mie (JP)
Yosuke Matsushima of Yokkaichi Mie (JP)
Katsuyoshi Komatsu of Yokkaichi Mie (JP)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099020 titled 'MEMORY DEVICE
Simplified Explanation
The memory device described in the abstract includes multiple conductive layers, a resistance change layer, and a switching layer with specific substances. Here is a simplified explanation of the patent application:
- The memory device consists of three conductive layers and two specific layers in between.
- The switching layer contains substances like oxides, nitrides, and oxynitrides of certain elements, along with metals.
- The substances in the switching layer enable the memory device to function effectively.
Potential Applications
The technology described in the patent application could be used in:
- Non-volatile memory devices
- Resistive random-access memory (RRAM) devices
Problems Solved
This technology helps in:
- Improving memory device performance
- Enhancing data storage capabilities
Benefits
The benefits of this technology include:
- Increased data storage capacity
- Faster data access speeds
Potential Commercial Applications
The technology could be applied in various industries, such as:
- Electronics manufacturing
- Data storage solutions
Possible Prior Art
One possible prior art for this technology is the development of resistive random-access memory (RRAM) devices, which also utilize resistance change layers for data storage.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and reliability?
This article does not provide a direct comparison between this technology and existing memory devices in terms of speed and reliability. Further research or testing may be needed to determine how this technology stacks up against current options.
What are the potential challenges or limitations of implementing this technology on a larger scale?
The article does not address the potential challenges or limitations of implementing this technology on a larger scale, such as production costs or scalability issues. Additional studies or analyses may be required to assess the feasibility of mass-producing this technology.
Original Abstract Submitted
according to one embodiment, memory device includes a first, second, and third conductive layers in this order, a resistance change layer between the first and the second conductive layers, and a switching layer between the second and the third conductive layers. the switching layer contains: at least one first substance from a group consisting of oxide of at least one element from a group consisting of cr, la, ce, y, sc, zr, and hf, nitride of the at least one element, and oxynitride of the at least one element; a second substance being at least one metal from a group consisting of te, se, sb, bi, ge, and sn; and at least one third substance from a group consisting of oxide of the second substance, nitride of the second substance, and oxynitride of the second substance.
