Kioxia corporation (20240099010). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Takamitsu Ishihara of Yokohama Kanagawa (JP)
Kazuya Matsuzawa of Kamakura Kanagawa (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099010 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes multiple layers and electrodes surrounding a gate electrode. Here is a simplified explanation of the patent application:
- The device consists of a gate electrode surrounded by first and second semiconductor layers.
- A first electrode layer contacts the first semiconductor layer, while a second electrode layer contacts both the first and second semiconductor layers.
- The first semiconductor layer is positioned between the first and second electrode layers.
- A third electrode layer surrounds the gate electrode and contacts the second semiconductor layer, which is between the second and third electrode layers.
- Charge storage layers are present between the gate electrode and each semiconductor layer.
Potential Applications
This technology could be applied in various memory devices, such as flash memory, to enhance storage capacity and performance.
Problems Solved
This innovation addresses the need for efficient and reliable semiconductor memory devices with improved charge storage capabilities.
Benefits
The benefits of this technology include increased memory density, faster data access speeds, and enhanced overall performance of semiconductor memory devices.
Potential Commercial Applications
The potential commercial applications of this technology could include consumer electronics, data storage systems, and other devices requiring high-performance memory solutions.
Possible Prior Art
One possible prior art for this technology could be the development of multi-layer memory structures in semiconductor devices to improve storage capacity and performance.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and reliability?
This article does not provide a direct comparison with existing memory devices in terms of speed and reliability. Further research or testing may be needed to determine the performance metrics of this technology compared to others.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges in implementing this technology on a large scale for commercial production. Factors such as manufacturing costs, scalability, and compatibility with existing systems could be important considerations that need to be explored further.
Original Abstract Submitted
a semiconductor memory device includes a gate electrode and a first and second semiconductor layer surrounding the gate electrode. a first electrode layer surrounds the gate electrode and contacts the first semiconductor layer. a second electrode layer surrounds the gate electrode and contacts the first and second semiconductor layers. the first semiconductor layer is between the first and second electrode layers. a third electrode layer surrounds the gate electrode and contacts the second semiconductor layer. the second semiconductor layer is between the second and third electrode layers. a first charge storage layer is between the gate electrode and the first semiconductor layer. a second charge storage layer is between the gate electrode and the second semiconductor layer.
