Kioxia corporation (20240099002). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hiroshi Kanno of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099002 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes multiple wiring layers, memory pillars, and insulators to facilitate data storage and retrieval.
- The device has a first wiring layer above a first semiconductor layer and a second wiring layer above the first semiconductor layer, with a member between the wiring layers.
- The first memory pillar extends through the first wiring layer, while the second memory pillar extends through the second wiring layer.
- The member between the wiring layers includes a first conductor contacting the first semiconductor layer, a first insulator between the wiring layers and the first conductor, and multiple second insulators arranged along a third direction between the first conductor and the first semiconductor layer.
Potential Applications
This technology can be applied in various semiconductor memory devices, such as flash memory, DRAM, and SRAM, to enhance data storage capacity and speed.
Problems Solved
1. Increased data storage capacity by utilizing multiple wiring layers and memory pillars. 2. Improved data retrieval speed by optimizing the structure of the memory device.
Benefits
1. Enhanced performance of semiconductor memory devices. 2. Increased efficiency in data storage and retrieval processes.
Potential Commercial Applications
"Semiconductor Memory Device with Multiple Wiring Layers and Memory Pillars" can be utilized in consumer electronics, data centers, and other industries requiring high-speed and high-capacity memory solutions.
Possible Prior Art
One possible prior art could be the use of multiple wiring layers in semiconductor memory devices to improve data storage capacity and speed. Additionally, the integration of memory pillars and insulators for enhanced performance may have been explored in previous patents or research studies.
Unanswered Questions
How does the device handle data encryption and security measures?
The abstract does not mention any specific details regarding data encryption or security features of the semiconductor memory device.
What is the expected lifespan of this technology compared to existing memory solutions?
The abstract does not provide information on the longevity or durability of the semiconductor memory device in comparison to current memory technologies.
Original Abstract Submitted
according to one embodiment, a semiconductor memory device includes a first wiring layer above a first semiconductor layer in a first direction and a second wiring layer above the first semiconductor layer and spaced from the first wiring layer in a second direction. a first memory pillar extends through the first wiring layer. a second memory pillar extends through the second wiring layer. a member is between the first and second wiring layers in the second direction and includes a first conductor contacting the first semiconductor layer, a first insulator between the wiring layers and the first conductor, and a plurality of second insulators arranged along a third direction and between the first conductor and the first semiconductor layer in the first direction.
