Kioxia corporation (20240099001). SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD
Organization Name
Inventor(s)
Tadashi Iguchi of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099001 titled 'SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD
Simplified Explanation
The semiconductor memory device described in the patent application includes a stacked body with insulating films and conductive films, as well as pillars made of semiconductor and insulator materials. The pillars are arranged in a specific configuration to improve the performance of the memory device.
- The semiconductor memory device has a stacked body with insulating films and conductive films.
- Pillars made of semiconductor and insulator materials are strategically placed within the stacked body.
- The pillars are designed to enhance the electrical connections within the memory device.
Potential Applications
The technology described in the patent application could be applied in various semiconductor memory devices, such as flash memory, DRAM, and SRAM. It could also be used in other electronic devices that require high-speed and high-density memory storage.
Problems Solved
This technology helps improve the performance and reliability of semiconductor memory devices by optimizing the electrical connections within the device. It also allows for higher memory density and faster data access speeds.
Benefits
The benefits of this technology include increased memory capacity, faster data processing speeds, and improved overall performance of electronic devices. It also enables the development of more efficient and reliable memory storage solutions.
Potential Commercial Applications
The technology described in the patent application could be valuable for semiconductor manufacturers looking to enhance the performance of their memory devices. It could also be of interest to companies developing electronic devices that require high-speed and high-density memory storage solutions.
Possible Prior Art
One possible prior art for this technology could be the use of pillars in semiconductor devices to improve electrical connections and performance. However, the specific configuration and materials used in this patent application may be unique and innovative.
Unanswered Questions
How does this technology compare to existing memory device designs in terms of performance and reliability?
The article does not provide a direct comparison between this technology and existing memory device designs. Further research and testing would be needed to determine the specific advantages and limitations of this innovation.
What are the potential challenges or limitations of implementing this technology in commercial semiconductor memory devices?
The article does not address any potential challenges or limitations that may arise when implementing this technology in commercial products. Additional studies and trials would be necessary to assess the feasibility and practicality of mass-producing memory devices using this innovation.
Original Abstract Submitted
according to one embodiment, a semiconductor memory device has a first film and a stacked body on the first film. the stacked body includes insulating films and conductive films stacked in a first direction. a first pillar extends through the stacked body and has a first semiconductor portion and a first insulator portion on an outer peripheral surface. a plurality of second pillars extend in the stacked body and reach the first film. the second pillars each comprise an insulator material and have a bottom surface with a protrusion protruding into the first film. a third pillar extends in the stacked body between adjacent second pillars. the third pillar comprises a conductor material that is electrically connected to one of the conductive films of the stacked body.
