Kioxia corporation (20240099000). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kotaro Nomura of Yokkaichi (JP)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099000 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes two regions, each with a stack and a pillar. The first region has an alternate stack with insulating films containing oxygen and conductive films, while the second region has a repeated stack with insulating films containing nitrogen and at least one of oxygen or hydrogen.
- Explanation of the patent/innovation:
- The first region includes a first stack with insulating films containing oxygen and conductive films, as well as a first pillar with a semiconductor layer. - The second region includes a repeated stack with insulating films containing nitrogen and at least one of oxygen or hydrogen, as well as a second pillar with a semiconductor layer. - The first and second regions are adjacent to each other in a direction intersecting the first direction.
Potential applications of this technology: - Memory devices - Semiconductor devices - Integrated circuits
Problems solved by this technology: - Enhanced performance of semiconductor memory devices - Improved data storage capabilities - Increased efficiency in memory operations
Benefits of this technology: - Higher data storage capacity - Faster data access speeds - More reliable memory operations
Potential commercial applications of this technology: - Consumer electronics - Computer hardware - Data storage solutions
Possible prior art: - Previous semiconductor memory devices with similar stack and pillar structures
Questions: 1. How does the presence of nitrogen and oxygen/hydrogen in the insulating films impact the performance of the semiconductor memory device? 2. What specific materials are used in the semiconductor layers of the pillars in this memory device, and how do they contribute to the overall functionality of the device?
Original Abstract Submitted
a semiconductor memory device of an embodiment includes a first region having a first stack and a first pillar, and a second region having a second stack and a second pillar. the first stack comprises an alternate stack in a first direction of a plurality of first insulating films containing oxygen and a plurality of first conductive films. the first pillar comprises a semiconductor layer and extends in the first direction within the first stack. the second stack comprises a repeated stack in the first direction of the plurality of first insulating films, a plurality of second insulating films, and a plurality of third insulating films in the order of the first insulating film, the second insulating film, and the third insulating film. the second insulating film contains nitrogen. the third insulating film contains nitrogen and at least one of oxygen and hydrogen. the second pillar comprises a semiconductor layer and extends in the first direction within the second stack. the first region and the second region are adjacent to each other in a second direction intersecting the first direction.
