Kioxia corporation (20240098998). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Saori Matsushita of Yokkaichi Mie (JP)
Tomonari Shioda of Nagoya Aichi (JP)
Takanori Yamanaka of Yokkaichi Mie (JP)
Ryota Fujitsuka of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240098998 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes a stacked body with alternating conductive and insulating layers, as well as a pillar extending through the body with memory cells at each intersection with the conductive layers. The pillar consists of a semiconductor layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer.
- The semiconductor memory device features a pillar structure with memory cells at each intersection, allowing for efficient data storage.
- The use of specific layers such as silicon oxynitride, silicon nitride, and silicon oxide helps to protect the semiconductor layer and enhance the performance of the memory cells.
Potential Applications
The technology described in the patent application could be applied in various electronic devices requiring high-density memory storage, such as smartphones, tablets, and computers.
Problems Solved
This technology solves the problem of increasing memory storage capacity in a compact and efficient manner, making it ideal for modern electronic devices with limited space.
Benefits
The benefits of this technology include improved memory storage capacity, enhanced performance, and increased reliability in electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of advanced semiconductor memory devices for consumer electronics, data storage systems, and other high-tech applications.
Possible Prior Art
One possible prior art in this field could be the use of similar layered structures in semiconductor devices for memory storage, but with variations in the specific materials and configurations used.
Unanswered Questions
How does this technology compare to existing memory storage solutions in terms of speed and energy efficiency?
The article does not provide specific details on the speed and energy efficiency of this technology compared to existing solutions.
Are there any limitations or challenges in implementing this technology on a larger scale for mass production?
The article does not address any potential limitations or challenges that may arise in scaling up the production of semiconductor memory devices using this technology.
Original Abstract Submitted
a semiconductor memory device includes: a stacked body in which a plurality of conductive layers and a plurality of insulating layers are stacked one by one alternately; and a pillar that extends in the stacked body in a stacking direction of the stacked body and includes a memory cell formed at each of intersections with the plurality of conductive layers, in which the pillar includes a semiconductor layer extending in the stacking direction, a silicon oxynitride layer covering a side wall of the semiconductor layer, a silicon nitride layer covering a side wall of the silicon oxynitride layer, and a silicon oxide layer covering a side wall of the silicon nitride layer, in which the silicon oxynitride layer has a hydrogen concentration of 1�10atm/cc or less in terms of average value.
