Kioxia corporation (20240098997). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Ryosuke Umino of Kuwana Mie (JP)
Daisuke Ikeno of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240098997 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract consists of a stacked film structure with electrode layers, insulating films, a charge storage layer, and a semiconductor layer. One of the electrode layers contains an amorphous layer made of a metal element and silicon.
- The semiconductor device includes a stacked film structure with alternating electrode layers and insulating films.
- A charge storage layer is located on the side surfaces of the electrode layers through a second insulating film.
- A semiconductor layer is positioned on the side surface of the charge storage layer via a third insulating film.
- At least one electrode layer contains a first electrode layer that is an amorphous layer composed of a metal element and silicon.
Potential Applications
The technology described in this patent application could be applied in:
- Memory devices
- Semiconductor manufacturing
- Integrated circuits
Problems Solved
This technology addresses issues related to:
- Improving semiconductor device performance
- Enhancing charge storage capabilities
- Increasing efficiency in memory devices
Benefits
The benefits of this technology include:
- Higher storage capacity
- Improved device reliability
- Enhanced data retention
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Data storage devices
- Semiconductor industry advancements
Possible Prior Art
One possible prior art for this technology could be the development of similar semiconductor devices with stacked film structures and charge storage layers.
Unanswered Questions
How does the amorphous layer composition affect the overall performance of the semiconductor device?
The abstract mentions that the electrode layer contains an amorphous layer made of a metal element and silicon, but it does not elaborate on how this composition impacts the device's functionality.
What specific semiconductor manufacturing processes are used to create the stacked film structure described in the patent application?
The abstract provides an overview of the semiconductor device's structure but does not delve into the specific manufacturing techniques employed to produce it.
Original Abstract Submitted
a semiconductor device includes: a stacked film alternately including a plurality of electrode layers and a plurality of first insulating films; a charge storage layer provided on the side surfaces of the electrode layers via a second insulating film; and a semiconductor layer provided on the side surface of the charge storage layer via a third insulating film. at least one electrode layer of the plurality of electrode layers includes a first electrode layer which is an amorphous layer comprising a metal element and silicon.
