Kioxia corporation (20240098995). SEMICONDUCTOR STORAGE DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR STORAGE DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Ryota Nihei of Yokkaichi Mie (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240098995 titled 'SEMICONDUCTOR STORAGE DEVICE
Simplified Explanation
The semiconductor storage device described in the abstract consists of multiple layers and electrodes arranged in a specific configuration to enhance performance and functionality.
- The device has first and second gate electrodes extending in one direction.
- A first semiconductor layer is positioned between the first and second gate electrodes.
- A second semiconductor layer is located between the first semiconductor layer and the second gate electrode, but separated from the first semiconductor layer.
- A third semiconductor layer is placed between the first and second gate electrodes, with a gap separating it from the first semiconductor layer.
- Charge trapping layers are interspersed between the gate electrodes and semiconductor layers to improve charge retention and control.
Potential Applications
This technology could be applied in advanced memory devices, such as flash memory, to increase storage capacity and improve data retention.
Problems Solved
This innovation addresses the challenge of maintaining data integrity and storage efficiency in semiconductor devices by optimizing the arrangement of layers and electrodes.
Benefits
The benefits of this technology include enhanced data storage capabilities, improved performance, and increased reliability in semiconductor storage devices.
Potential Commercial Applications
The optimized semiconductor storage device could find applications in various industries, including consumer electronics, data storage, and computing, where high-performance memory solutions are required.
Possible Prior Art
Prior art in semiconductor memory devices includes various configurations of layers and electrodes to improve performance and functionality. However, the specific arrangement described in this patent application may offer unique advantages not found in existing technologies.
Unanswered Questions
How does this technology compare to existing memory storage solutions in terms of speed and capacity?
The article does not provide a direct comparison between this technology and other memory storage solutions available in the market. Further research and testing would be needed to evaluate the performance metrics of this innovation.
What are the potential manufacturing challenges associated with implementing this technology on a large scale?
The article does not address the potential manufacturing challenges that may arise when scaling up production of semiconductor storage devices using this technology. Factors such as cost, yield rates, and production complexity could impact the commercial viability of this innovation.
Original Abstract Submitted
according to one embodiment, a semiconductor storage device has first and second gate electrodes extending in one direction. a first semiconductor layer is between the first gate electrode and the second gate electrode. a second semiconductor layer is also between the first semiconductor layer and the second gate electrode but separated from the first semiconductor layer. a third semiconductor layer is between the first gate electrode and the second gate electrode but is spaced from the first semiconductor layer by a gap. a first charge trapping layer is between the first gate electrode and the first semiconductor layer. a second charge trapping layer is between the second gate electrode and the second semiconductor layer. a third charge trapping layer is between the first gate electrode and the third semiconductor layer.
