Kioxia corporation (20240098983). MEMORY DEVICE simplified abstract

MEMORY DEVICE

Organization Name

kioxia corporation

Inventor(s)

Takashi Inukai of Yokohama Kanagawa (JP)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240098983 titled 'MEMORY DEVICE

Simplified Explanation

The memory device described in the abstract includes word lines, bit lines, transistors, capacitors, and a plate line. The transistors consist of first and second transistors, each coupled to first and second word lines, respectively. The first and second transistors are arranged to alternate in a first direction. The bit lines consist of first to fourth bit lines arranged sequentially in the first direction. The first and third bit lines are connected to the other end of the first and second transistors, while the second bit line is connected to the other end of the first transistors only, and the fourth bit line is connected to the other end of the second transistors only.

• Word lines, bit lines, transistors, capacitors, and a plate line are components of the memory device.
• The first and second transistors are coupled to first and second word lines, respectively, and are arranged to alternate in a first direction.
• The bit lines include first to fourth bit lines arranged sequentially in the first direction.
• The first and third bit lines are connected to the other end of the first and second transistors, while the second bit line is connected to the other end of the first transistors only, and the fourth bit line is connected to the other end of the second transistors only.

Potential Applications

The technology described in the patent application could be applied in various memory devices, such as DRAMs, to improve memory storage and access capabilities.

Problems Solved

This technology helps in organizing and connecting transistors and bit lines in a memory device efficiently, enhancing its performance and reliability.

Benefits

The benefits of this technology include increased memory device efficiency, improved data storage capacity, and enhanced data access speed.

Potential Commercial Applications

The technology could find applications in the semiconductor industry for manufacturing advanced memory devices with higher performance and reliability.

Possible Prior Art

One possible prior art for this technology could be the design of memory devices with similar transistor and bit line configurations in the semiconductor industry.

Unanswered Questions

How does this technology compare to existing memory device designs in terms of performance and efficiency?

The article does not provide a direct comparison with existing memory device designs to evaluate its performance and efficiency.

What are the specific technical specifications and requirements for implementing this technology in practical memory devices?

The article does not detail the specific technical specifications and requirements for implementing this technology in practical memory devices.

Original Abstract Submitted

according to one embodiment, a memory device includes word lines, bit lines, transistors, capacitors, and a plate line. the transistors include first transistors and second transistors. the first and second transistors are coupled to first and second word lines, respectively. the first and second transistors are arranged to alternate each other in a first direction. the bit lines include first to fourth bit lines arranged sequentially in the first direction. the first and third bit lines are coupled to the other end of the first and second transistors. the second bit line is coupled to the other end of the first transistors and is not coupled to the other end of the second transistors. the fourth bit line is coupled to the other end of the second transistors and is not coupled to the other end of the first transistors.