Kioxia corporation (20240098981). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Daichi Nishikawa of Mie Mie (JP)
Daisuke Ikeno of Yokkaichi Mie (JP)
Atsuko Sakata of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240098981 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a pillar of an oxide semiconductor material with a gate insulating layer surrounding its side surface. The gate insulating layer consists of a lower portion, an upper portion, and an intermediate portion, with a gate electrode surrounding the intermediate portion. Additionally, there are lower and upper electrodes connected to the lower and upper surfaces of the pillar, respectively. The gate electrode contains a metal portion with a metallic element and a first nitrogen-containing portion between the metal portion and the gate insulating layer. The lower electrode includes a first oxide conductor portion with a second nitrogen-containing portion at the interface with the gate insulating layer.
- Pillar of oxide semiconductor material
- Gate insulating layer with lower, upper, and intermediate portions
- Gate electrode surrounding the intermediate portion
- Lower electrode with first oxide conductor portion
- Upper electrode connected to the upper surface of the pillar
- Metal portion and first nitrogen-containing portion in the gate electrode
- Second nitrogen-containing portion in the lower electrode
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- High-performance electronic components
- Next-generation integrated circuits
Problems Solved
This technology helps address:
- Enhancing the performance of semiconductor devices
- Improving the efficiency of electronic components
- Enabling the development of more advanced technologies
Benefits
The benefits of this technology include:
- Increased speed and efficiency of electronic devices
- Enhanced reliability and durability of semiconductor components
- Facilitation of cutting-edge technological advancements
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Semiconductor manufacturing industry
- Electronics and consumer electronics sector
- Research and development of new electronic technologies
Possible Prior Art
There may be prior art related to:
- Semiconductor device structures with oxide semiconductor materials
- Gate insulating layers with nitrogen-containing portions
- Electrodes connected to oxide semiconductor pillars
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research or testing may be needed to determine the specific advantages of this technology over current solutions.
What are the potential challenges or limitations of implementing this technology on a larger scale for commercial production?
The article does not address the potential challenges or limitations of implementing this technology on a larger scale for commercial production. Factors such as scalability, cost-effectiveness, and compatibility with existing manufacturing processes may need to be considered in future studies.
Original Abstract Submitted
according to one embodiment, a semiconductor device includes a pillar of an oxide semiconductor material and a gate insulating layer that surrounds a side surface of the pillar. the gate insulating layer includes a lower portion, an upper portion, and an intermediate portion. a gate electrode surrounds the intermediate portion of the gate insulating layer. a lower electrode is provided that includes a first oxide conductor portion that is connected to a lower surface of the pillar. an upper electrode is provided connected to an upper surface of the pillar. the gate electrode includes a metal portion containing a metallic element and a first nitrogen-containing portion between the metal portion and the gate insulating layer. the first oxide conductor portion includes a second nitrogen-containing at an interface between the first oxide conductor portion and the gate insulating layer.
