Kioxia corporation (20240098977). SEMICONDUCTOR DEVICE simplified abstract

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SEMICONDUCTOR DEVICE

Organization Name

kioxia corporation

Inventor(s)

Takashi Inukai of Yokohama Kanagawa (JP)

Hiroki Tokuhira of Kawasaki Kanagawa (JP)

Tsuneo Inaba of Kamakura Kanagawa (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240098977 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes multiple layers of wiring lines and semiconductor layers, separated by insulating layers. The semiconductor layers penetrate the wiring lines in a specific manner, allowing for efficient signal transmission and device operation.

  • The semiconductor device includes a first wiring line in a first layer and a second wiring line in a second layer, both extending in the same direction.
  • The device also includes semiconductor layers that penetrate the wiring lines in a specific order, with the first semiconductor layer penetrating only the first wiring line and the second semiconductor layer penetrating only the second wiring line.
  • Insulating layers are provided between the wiring lines and semiconductor layers to prevent interference and ensure proper functioning of the device.

Potential Applications

This technology could be applied in various semiconductor devices such as integrated circuits, microprocessors, and memory chips.

Problems Solved

This technology helps in improving signal transmission efficiency, reducing interference between different layers, and enhancing the overall performance of semiconductor devices.

Benefits

The benefits of this technology include improved device performance, increased reliability, and enhanced functionality in complex semiconductor systems.

Potential Commercial Applications

Potential commercial applications of this technology include consumer electronics, telecommunications equipment, and automotive electronics.

Possible Prior Art

One possible prior art could be the use of insulating layers in semiconductor devices to prevent interference between different layers. Another could be the integration of multiple wiring lines in different layers to enhance signal transmission efficiency.

Unanswered Questions

How does this technology compare to existing methods of integrating wiring lines and semiconductor layers in semiconductor devices?

This article does not provide a direct comparison with existing methods, so it is unclear how this technology differs or improves upon current practices.

What specific manufacturing processes are required to implement this technology in semiconductor devices?

The article does not detail the specific manufacturing processes needed to incorporate this technology, leaving a gap in understanding the practical implementation of the innovation.


Original Abstract Submitted

according to one embodiment, a semiconductor device includes a first wiring line provided in a first layer and extending in a first direction, a second wiring line provided in a second layer and extending in the first direction, a first semiconductor layer penetrating the first wiring line without penetrating the second wiring line and extending in a second direction, a second semiconductor layer penetrating the second wiring line without penetrating the first wiring line and extending in the second direction, a first insulating layer provided between the first wiring line and the first semiconductor layer, a second insulating layer provided between the second wiring line and the second semiconductor layer.