Kioxia corporation (20240098976). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yasuyuki Sonoda of Kumage (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240098976 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a first conductor, a second conductor, an oxide semiconductor layer, first and second wirings, insulating films, and insulating layers with voids.
- The device features a first conductor and a second conductor for electrical connections.
- An oxide semiconductor layer is placed between the first and second conductors, extending in a specific direction.
- A first wiring crosses the oxide semiconductor layer in a different direction, surrounded by an insulating film.
- A second wiring extends across both the first and second directions, connected to the second conductor.
- Insulating layers with voids are provided to isolate and protect the wiring and semiconductor components.
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices, such as integrated circuits, sensors, and memory devices.
Problems Solved
This technology helps in improving the performance and reliability of semiconductor devices by providing efficient wiring and insulation solutions for complex circuit designs.
Benefits
The benefits of this technology include enhanced functionality, increased efficiency, and improved durability of semiconductor devices, leading to better overall performance.
Potential Commercial Applications
The semiconductor device described in this patent application has potential commercial applications in the electronics industry, particularly in the manufacturing of high-performance electronic devices for various applications.
Possible Prior Art
One possible prior art for this technology could be the use of insulating layers with voids in semiconductor devices to improve insulation and reduce interference between components.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing semiconductor devices in terms of performance and efficiency.
What are the specific manufacturing processes involved in producing this semiconductor device?
The article does not detail the specific manufacturing processes involved in producing this semiconductor device.
Original Abstract Submitted
a semiconductor device includes: a first conductor; a second conductor; an oxide semiconductor layer provided between the first conductor and the second conductor and extending in a first direction; a first wiring extending in a second direction across the first direction and surrounding the oxide semiconductor layer; an insulating film provided between the first wiring and the oxide semiconductor layer; a second wiring provided on the second conductor and extending in a third direction across each of the first direction and the second direction; a first insulating layer provided on a side surface of the second wiring and having a first void; and a second insulating layer provided on the first insulating layer and having a second void.
