Kioxia corporation (20240098962). SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Daisuke Watanabe of Yokkaichi Mie (JP)
Akifumi Gawase of Kuwana Mie (JP)
Takeshi Iwasaki of Kuwana Mie (JP)
Kazuhiro Katono of Yokkaichi Mie (JP)
Yusuke Muto of Yokkaichi Mie (JP)
Yusuke Miki of Yokkaichi Mie (JP)
Akinori Kimura of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240098962 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a first electrode, a second electrode, an oxide semiconductor, and a first oxide layer containing predetermined elements. The predetermined element can be tantalum, boron, hafnium, silicon, zirconium, or niobium, while the additional element can be phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.
- The semiconductor device consists of a first electrode, a second electrode, an oxide semiconductor, and a first oxide layer with specific elements.
- The predetermined element in the first oxide layer can be tantalum, boron, hafnium, silicon, zirconium, or niobium.
- The additional element in the first oxide layer can be phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.
Potential Applications
The technology described in the patent application could be used in:
- Semiconductor devices
- Electronics industry
- Nanotechnology
Problems Solved
This technology helps in:
- Enhancing semiconductor performance
- Improving device efficiency
- Increasing device reliability
Benefits
The benefits of this technology include:
- Higher performance levels
- Enhanced device durability
- Improved overall functionality
Potential Commercial Applications
The potential commercial applications of this technology can be seen in:
- Semiconductor manufacturing
- Electronic component production
- Advanced technology sectors
Possible Prior Art
There may be prior art related to:
- Semiconductor device structures
- Oxide semiconductor materials
- Electrode configurations
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency levels.
What are the specific manufacturing processes involved in creating this semiconductor device?
The article does not delve into the detailed manufacturing processes required to produce this semiconductor device.
Original Abstract Submitted
a semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.
