Kioxia corporation (20240097044). SEMICONDUCTOR DEVICE simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE

Organization Name

kioxia corporation

Inventor(s)

Yusuke Kasahara of Yokkaichi Mie (JP)

Kappei Imamura of Kuwana Mie (JP)

Akifumi Gawase of Kuwana Mie (JP)

Shinji Mori of Nagoya Aichi (JP)

Akihiro Kajita of Yokkaichi Mie (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097044 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a unique structure with an oxide semiconductor column extending through multiple insulating layers and a conductive layer. The column has different semiconductor portions at specific positions within the device.

  • The semiconductor device includes a first conductive layer sandwiched between first and second insulating layers.
  • An oxide semiconductor column extends through these layers in a specific direction.
  • A third insulating layer covers the column.
  • The column has distinct semiconductor portions at different positions within the device.
  • The first semiconductor portion aligns with the first insulating layer, the second semiconductor portion aligns with the second insulating layer, and the third semiconductor portion aligns with the first conductive layer.
  • The first and second semiconductor portions are continuous in a certain direction, while the third semiconductor portion is not continuous in that direction.

Potential Applications

This semiconductor device structure could be utilized in:

  • Advanced electronic devices
  • High-performance sensors
  • Efficient energy storage systems

Problems Solved

This technology addresses issues such as:

  • Improving semiconductor device performance
  • Enhancing device reliability
  • Increasing device efficiency

Benefits

The benefits of this semiconductor device structure include:

  • Enhanced device functionality
  • Improved device durability
  • Increased device lifespan

Potential Commercial Applications

This innovative technology could be applied in various commercial sectors, including:

  • Consumer electronics
  • Automotive industry
  • Renewable energy sector

Possible Prior Art

One possible prior art related to this technology is the use of oxide semiconductors in electronic devices. Previous research and patents may exist on similar structures or materials.

Unanswered Questions

How does this semiconductor device structure compare to traditional semiconductor designs?

This article does not provide a direct comparison between this innovative semiconductor device structure and traditional semiconductor designs. It would be beneficial to understand the specific advantages and disadvantages of this new structure in comparison to existing technologies.

What are the potential challenges in manufacturing and scaling up the production of semiconductor devices with this unique structure?

The article does not address the potential challenges that may arise in manufacturing and scaling up the production of semiconductor devices with this specific structure. It would be important to explore the feasibility and practicality of mass-producing devices based on this technology.


Original Abstract Submitted

according to one embodiment, a semiconductor device includes a first conductive layer between first and second insulating layers with an oxide semiconductor column extending in the first direction through these layers. a third insulating layer covers the column. the column has a first semiconductor portion at a first position matching the first insulating layer, a second semiconductor portion at a second position matching second insulating layer, and a third semiconductor portion at a third position matching the first conductive layer. the first semiconductor portion is continuous along a second direction between the third insulating layer, the second semiconductor portion is continuous along the second direction between the third insulating layer, but the third semiconductor portion is not continuous between the third insulating layer.