Kioxia corporation (20240097040). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

kioxia corporation

Inventor(s)

Tomoyuki Funabasama of Yokkaichi Mie (JP)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097040 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application includes a substrate, a first transistor, and a second transistor. The first transistor features a first diffusion layer region, a second diffusion layer region, a first gate insulating film, a first gate electrode, and a first silicide layer. The second transistor includes a third diffusion layer region, a fourth diffusion layer region, a second gate insulating film, a second gate electrode, and a second silicide layer. The distance between the first silicide layer and the first gate insulating film is greater than the distance between the second silicide layer and the second gate insulating film.

• The semiconductor device includes two transistors with different diffusion layer regions, gate insulating films, gate electrodes, and silicide layers.
• The first silicide layer is located on the first and second diffusion layer regions of the first transistor, while the second silicide layer is on the third and fourth diffusion layer regions of the second transistor.
• The distance between the first silicide layer and the first gate insulating film is larger than the distance between the second silicide layer and the second gate insulating film.

Potential Applications

This technology could be applied in:

• Integrated circuits
• Microprocessors
• Memory devices

Problems Solved

• Improved performance of semiconductor devices
• Enhanced efficiency of transistors

Benefits

• Higher speed and reliability in electronic devices
• Better control of electrical signals

Potential Commercial Applications

Optimizing Semiconductor Device Performance for Enhanced Electronics

Possible Prior Art

Prior art in semiconductor device manufacturing may include similar structures and configurations in transistor design.

Unanswered Questions

How does this technology impact power consumption in electronic devices?

The patent application does not specifically address the impact of this technology on power consumption in electronic devices. Further research or experimentation may be needed to determine the effects on power efficiency.

Are there any limitations to the scalability of this technology for smaller electronic devices?

The scalability of this technology for smaller electronic devices is not discussed in the patent application. It would be important to investigate any potential limitations or challenges in applying this technology to miniaturized electronic devices.

Original Abstract Submitted

a semiconductor device is provided with a substrate, a first transistor, and a second transistor. the first transistor has a first diffusion layer region, a second diffusion layer region, a first gate insulating film, a first gate electrode, and a first silicide layer. the first silicide layer is provided on the first diffusion layer region and the second diffusion layer region. the second transistor has a third diffusion layer region, a fourth diffusion layer region, a second gate insulating film, a second gate electrode, and a second silicide layer. the second silicide layer is provided on the third diffusion layer region and the fourth diffusion layer region. a distance between the first silicide layer and the first gate insulating film is larger than a distance between the second silicide layer and the second gate insulating film.