Kioxia corporation (20240096877). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yuya Omura of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096877 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a technology involving transistors and a resistance-capacitance element. The transistors have a gate insulating film with a gate dielectric film and a gate electrode made of a metal material. The resistance-capacitance element is created by stacking various insulating and conductive layers on a semiconductor substrate.
- Transistors with gate insulating film and gate electrode made of metal material
- Resistance-capacitance element formed by stacking insulating and conductive layers on semiconductor substrate
- Second insulating film in resistance-capacitance element includes gate dielectric film
- First conductive layer in resistance-capacitance element has higher resistance than second conductive layer
Potential Applications
This technology could be applied in semiconductor devices, integrated circuits, and electronic components.
Problems Solved
This technology helps in improving the performance and efficiency of electronic devices by providing a more stable and reliable resistance-capacitance element.
Benefits
The benefits of this technology include enhanced functionality, increased durability, and improved overall performance of electronic devices.
Potential Commercial Applications
Potential commercial applications of this technology could include the manufacturing of advanced electronic devices, integrated circuits, and semiconductor components.
Possible Prior Art
One possible prior art could be the use of similar resistance-capacitance elements in semiconductor devices and integrated circuits.
Unanswered Questions
How does this technology compare to existing resistance-capacitance elements in terms of performance and efficiency?
This article does not provide a direct comparison with existing technologies in the field.
What specific electronic devices or applications could benefit the most from this technology?
The article does not specify particular electronic devices or applications that could benefit significantly from this technology.
Original Abstract Submitted
according to one embodiment, transistors and a resistance-capacitance element are provided. the transistors each have a gate insulating film with a gate dielectric film and a gate electrode of a metal material. the resistance-capacitance element is provided by stacking a first insulating film, a first conductive layer, a stopper insulating film, a second insulating film, and a second conductive layer on an upper surface of a semiconductor substrate. the second insulating film includes the gate dielectric film like the gate insulating film. the second conductive layer is made of the same metal material as the gate electrode. the first conductive layer is a conductive material having a higher resistance than the second conductive layer.
