Kioxia corporation (20240096821). SEMICONDUCTOR STORAGE DEVICE simplified abstract

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SEMICONDUCTOR STORAGE DEVICE

Organization Name

kioxia corporation

Inventor(s)

Kenta Sasaki of Mie Mie (JP)

SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096821 titled 'SEMICONDUCTOR STORAGE DEVICE

Simplified Explanation

The patent application describes a semiconductor storage device with a unique structure involving multiple chips, memory cell arrays, wiring layers, memory pillars, connection pads, contacts, insulator layers, and stress values.

  • The semiconductor storage device includes a first chip with a substrate and a second chip.
  • The second chip has a memory cell array with wiring layers spaced apart from each other in a first direction.
  • A memory pillar penetrates the wiring layers in the first direction.
  • Connection pads are located in a boundary between the first and second chips.
  • Contacts extend in the first direction from the connection pads.
  • An insulator layer surrounds the contacts in a plane parallel to the substrate.
  • A first member is adjacent to the insulator layer in the plane.
  • The insulator layer separates the first member from the first contacts, and the first member has a stress value different from a stress value of the first insulator layer.

Potential Applications

This technology could be applied in:

  • High-speed data storage devices
  • Advanced computing systems

Problems Solved

This technology helps in:

  • Increasing data storage capacity
  • Enhancing data transfer speeds

Benefits

The benefits of this technology include:

  • Improved performance of semiconductor storage devices
  • Enhanced reliability and durability

Potential Commercial Applications

A potential commercial application for this technology could be:

  • Next-generation solid-state drives (SSDs)

Possible Prior Art

One possible prior art for this technology could be:

  • Previous patents related to semiconductor storage devices with unique structures

Unanswered Questions

How does this technology compare to existing semiconductor storage devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor storage devices, so it is unclear how this technology stacks up against current solutions.

What are the potential challenges or limitations of implementing this technology on a large scale in commercial products?

The article does not address the potential challenges or limitations of scaling up this technology for mass production and commercialization.


Original Abstract Submitted

according to one embodiment, a semiconductor storage device includes a first chip with a substrate and a second chip. the second chip has a memory cell array with wiring layers spaced apart from each other in a first direction and a memory pillar that penetrates the wiring layers in the first direction. connection pads are in a boundary between the first and second chips. contacts extend in the first direction from the connection pads. an insulator layer surrounds the contacts in a plane parallel to the substrate. a first member is adjacent to the insulator layer in the plane. the insulator layer separates the first member from the first contacts, and the first member has a stress value different from a stress value of the first insulator layer.