Kioxia corporation (20240096795). SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kotaro Fujii of Yokkaichi (JP)
SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096795 titled 'SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
A semiconductor storage device according to an embodiment includes a first wiring, a second wiring, a first insulating layer, a first insulator, and a conductor. The first insulating layer has a first portion, a second portion, and a third portion. The first portion is stacked on the first wiring. The second portion is stacked on the second wiring. The third portion is on the opposite side of the first wiring and the second wiring with respect to the first portion and the second portion.
- The semiconductor storage device includes multiple layers of insulating material to separate and protect the wiring and conductor components.
- The design of the device allows for efficient stacking of different portions of the insulating layer on the respective wirings, optimizing space and functionality.
- The conductor within the device facilitates the flow of electrical signals between the wirings, enabling data storage and retrieval processes.
Potential Applications
The technology described in this patent application could be applied in various semiconductor storage devices such as flash memory, solid-state drives, and other types of non-volatile memory solutions.
Problems Solved
This technology solves the problem of efficiently organizing and protecting the internal components of a semiconductor storage device, ensuring reliable performance and longevity.
Benefits
The benefits of this technology include improved data storage capabilities, enhanced device durability, and potentially increased data transfer speeds.
Potential Commercial Applications
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Possible Prior Art
One possible prior art could be the use of multiple insulating layers in semiconductor devices to protect and separate internal components. Another could be the integration of conductors within semiconductor storage devices for data transfer purposes.
Unanswered Questions
How does this technology compare to existing semiconductor storage devices in terms of performance and reliability?
This article does not provide a direct comparison with existing semiconductor storage devices in terms of performance and reliability. Further testing and analysis would be needed to determine the specific advantages of this technology over current solutions.
What are the potential limitations or drawbacks of implementing this technology in semiconductor storage devices?
The article does not address any potential limitations or drawbacks of implementing this technology in semiconductor storage devices. It would be important to consider factors such as cost, manufacturing complexity, and compatibility with existing systems when evaluating the feasibility of widespread adoption.
Original Abstract Submitted
a semiconductor storage device according to an embodiment includes a first wiring, a second wiring, a first insulating layer, a first insulator, and a conductor. the first insulating layer has a first portion, a second portion, and a third portion. the first portion is stacked on the first wiring. the second portion is stacked on the second wiring. the third portion is on the opposite side of the first wiring and the second wiring with respect to the first portion and the second portion.
