Kioxia corporation (20240096626). METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Toshiyuki Sasaki of Yokkaichi Mie (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096626 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method for manufacturing a semiconductor device involving the use of a mask material containing a first metal with specific content percentages, and performing treatments at different temperatures and gas atmospheres.
- Explanation of the patent/innovation:
- The method involves forming a mask material with two layers, one with a lower content of the first metal and the other with a higher content. - The mask material is used to pattern and process a to-be-processed film above an underlying film. - The processing includes two treatments at different temperatures and gas atmospheres to achieve desired results in the semiconductor device manufacturing process.
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, memory chips, and sensors.
Problems Solved
- Provides a method for precise patterning and processing of semiconductor films. - Allows for controlled treatments at different temperatures and gas atmospheres to achieve specific outcomes in device manufacturing.
Benefits
- Improved accuracy and control in semiconductor device manufacturing. - Enhanced performance and reliability of the final products.
Potential Commercial Applications
The technology can be utilized by semiconductor companies, electronics manufacturers, and research institutions for developing advanced semiconductor devices with high precision and efficiency.
Possible Prior Art
Prior art may include patents or publications related to semiconductor device manufacturing processes involving mask materials, treatments at different temperatures, and gas atmospheres for film processing.
Unanswered Questions
How does this method compare to existing semiconductor manufacturing techniques?
This method offers a unique approach to patterning and processing semiconductor films, but it would be beneficial to compare its efficiency, cost-effectiveness, and overall performance with traditional methods.
What are the specific parameters for the first and second treatments in terms of temperature and gas composition?
More detailed information on the exact temperatures, gas types, and treatment durations for the first and second treatments would provide a clearer understanding of the process.
Original Abstract Submitted
a method for manufacturing a semiconductor device includes forming, on a to-be-processed film above an underlying film, a mask material containing a first metal and comprising a first mask layer which is provided on the to-be-processed film and whose content of the first metal is lower than a first predetermined percentage, and a second mask layer which is provided on the first mask layer and whose content of the first metal is equal to or higher than the first predetermined percentage. the manufacturing method includes patterning the mask material. the manufacturing method includes processing the to-be-processed film using the mask material as a mask. the processing of the to-be-processed film includes performing a first treatment to process the to-be-processed film at a first temperature in an atmosphere of a first gas. the processing of the to-be-processed film includes performing a second treatment to process the to-be-processed film at a second temperature higher than the first temperature in an atmosphere of a second gas different from the first gas.
