Kioxia corporation (20240096601). TARGET PROCESSING DEVICE AND TARGET PROCESSING METHOD simplified abstract

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TARGET PROCESSING DEVICE AND TARGET PROCESSING METHOD

Organization Name

kioxia corporation

Inventor(s)

Takeharu Motokawa of Zushi Kanagawa (JP)

Noriko Sakurai of Yokohama Kanagawa (JP)

Hideaki Sakurai of Kawasaki Kanagawa (JP)

TARGET PROCESSING DEVICE AND TARGET PROCESSING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096601 titled 'TARGET PROCESSING DEVICE AND TARGET PROCESSING METHOD

Simplified Explanation

The target processing method described in the abstract involves importing a target into a processing chamber, forming a film containing carbon on the target using ion and plasma processes, and then removing the film through a reaction with a second plasma. This process is repeated multiple times without removing the target from the chamber.

  • Import target into processing chamber
  • Form film with carbon using ion and plasma processes
  • Remove film with second plasma
  • Repeat process multiple times without removing target

Potential Applications

The technology could be applied in industries such as semiconductor manufacturing, thin film deposition, and surface modification processes.

Problems Solved

This method allows for the efficient and controlled deposition and removal of carbon-containing films on a target material without the need for frequent removal and reinsertion of the target into the processing chamber.

Benefits

- Improved control over film deposition and removal processes - Increased efficiency in target processing - Reduced downtime for target removal and reinsertion

Potential Commercial Applications

Optimizing Carbon Film Deposition and Removal Process for Enhanced Target Processing Efficiency

Possible Prior Art

Prior art may include similar methods for film deposition and removal processes in target processing chambers, but specific details of this alternating process may be novel.

Unanswered Questions

How does this method compare to traditional film deposition and removal processes in terms of efficiency and control?

This method offers improved efficiency and control by alternately performing film formation and removal without removing the target from the processing chamber.

What are the potential limitations or challenges of implementing this alternating film deposition and removal process in industrial settings?

Challenges may include optimizing the process parameters for different target materials and film thicknesses, as well as ensuring consistent film quality over multiple cycles of deposition and removal.


Original Abstract Submitted

a target processing method includes: importing a target into a processing chamber; forming a film including carbon on the target using at least one of first ion including carbon and a first plasma including carbon; and removing the film by a reaction between a second plasma and the film, wherein the forming of the film and the removing of the film are alternately performed a number of times in the processing chamber without removing the target from the processing chamber.