Kioxia corporation (20240095112). MEMORY SYSTEM AND METHOD simplified abstract
Contents
- 1 MEMORY SYSTEM AND METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY SYSTEM AND METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY SYSTEM AND METHOD
Organization Name
Inventor(s)
Marie Takada of Yokohama Kanagawa (JP)
Masanobu Shirakawa of Chigasaki Kanagawa (JP)
Naomi Takeda of Yokohama Kanagawa (JP)
MEMORY SYSTEM AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240095112 titled 'MEMORY SYSTEM AND METHOD
Simplified Explanation
The abstract of the patent application describes a controller that acquires temperature detection values, converts voltage values, and reads data from memory cells based on the temperature detection values.
- The controller acquires a first temperature detection value and performs an acquisition operation on a first storage area.
- It converts a first voltage value into a second voltage value representing the read voltage in a temperature set value based on the first temperature detection value.
- The acquisition operation involves determining whether memory cells are on or off using the read voltages and acquiring the first voltage value for suppressing error bits.
- The controller then acquires a second temperature detection value and converts the second voltage value into a third voltage value representing the read voltage in the second temperature detection value.
- Data is read from the memory cells using the voltage indicated by the third voltage value.
Potential Applications
This technology can be applied in various electronic devices that require accurate temperature detection and voltage conversion for reading data from memory cells.
Problems Solved
1. Error bits suppression during data acquisition. 2. Accurate reading of data from memory cells based on temperature variations.
Benefits
1. Improved data accuracy. 2. Enhanced performance in temperature-sensitive environments.
Potential Commercial Applications
"Temperature-Driven Memory Cell Reading Technology for Electronic Devices"
Possible Prior Art
There may be prior art related to temperature detection and voltage conversion in memory cell reading technologies.
Unanswered Questions
How does this technology compare to existing methods of temperature-driven memory cell reading?
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the advantages and disadvantages of this technology.
What specific electronic devices can benefit the most from this technology?
The article does not specify which electronic devices would benefit the most from this technology, leaving room for further exploration into potential applications.
Original Abstract Submitted
according to an embodiment, a controller acquires a first temperature detection value and executes an acquisition operation on a first storage area. the controller converts a first voltage value into a second voltage value representing the read voltage in a temperature set value based on the first temperature detection value and records the second voltage value. the acquisition operation is an operation of determining, by using the read voltages, whether memory cells are on or off and acquiring the first voltage value representing the read voltage for suppressing error bits. after that, the controller acquires a second temperature detection value and converts the second voltage value into a third voltage value representing the read voltage in the second temperature detection value. the controller reads data from the memory cells by using, as the read voltage, a voltage indicated by the third voltage value.
