Kabushiki kaisha toshiba (20240097679). RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Takayuki Teraguchi of Kawasaki Kanagawa (JP)
RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097679 titled 'RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a patent application for a radio frequency switch of a single-pole-n-throw (SPNT) type, which includes various components such as RF terminals, MOS transistors, termination resistors, and common terminals.
- The radio frequency switch includes first MOS transistors between the RF terminals and the common terminal, as well as termination resistors connected to the RF terminals in a selected state when the corresponding MOS transistors are off.
- Second MOS transistors are connected in parallel to the termination resistors and are controlled in the same manner as the first MOS transistors.
Potential Applications
The technology described in this patent application could be used in various RF communication systems, such as mobile phones, satellite communication devices, and radar systems.
Problems Solved
This technology solves the problem of efficiently switching between different RF terminals while maintaining signal integrity and minimizing signal loss.
Benefits
The benefits of this technology include improved signal switching performance, reduced signal loss, and enhanced overall efficiency of RF communication systems.
Potential Commercial Applications
Potential commercial applications of this technology include RF switches for consumer electronics, telecommunications equipment, and aerospace systems.
Possible Prior Art
One possible prior art for this technology could be traditional RF switches that may not offer the same level of efficiency and performance as the described SPNT RF switch.
Unanswered Questions
How does this technology compare to existing RF switch designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing RF switch designs to evaluate its performance and efficiency in relation to other technologies.
What are the specific technical specifications and requirements for implementing this technology in practical applications?
The article does not delve into the specific technical specifications and requirements for implementing this technology in real-world applications, such as power consumption, frequency range, or compatibility with different RF systems.
Original Abstract Submitted
according to one embodiment, a radio frequency switch of a single-pole-n-throw (spnt) type includes a first rf terminal, a second rf terminal, a single rf common terminal, first mos transistors, termination resistors, and second mos transistors. the first mos transistors are respectively provided between the first rf terminal and the rf common terminal and between the second rf terminal and the rf common terminal. each of the termination resistors is configured to be connected to the first rf terminal or the second rf terminal in a selected state where a corresponding one of the first mos transistors is in an off state. the second mos transistors are connected in parallel to the respective termination resistors, and each of the second mos transistors is configured to be controlled in a same manner as a corresponding one of the first mos transistors.
