Kabushiki kaisha toshiba (20240097676). HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Takayuki Teraguchi of Kawasaki Kanagawa (JP)
HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097676 titled 'HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes an SPNT-type high frequency switch that includes a series of first MOS transistors, second MOS transistors, and a capacitor. The first MOS transistors are connected in series between RF terminals and an RF common terminal, while the second MOS transistors are connected to adjacent first MOS transistors. The capacitor is connected between ground and one end of a second MOS transistor, which is connected to the RF terminals.
- The high frequency switch includes a series of first and second MOS transistors for efficient switching between RF terminals.
- A capacitor is utilized to improve the performance of the switch by providing additional functionality.
Potential Applications
The technology can be applied in:
- Wireless communication systems
- Radar systems
- Satellite communication systems
Problems Solved
- Improved signal switching capabilities
- Enhanced performance in high frequency applications
Benefits
- Increased efficiency in signal transmission
- Reduced signal loss
- Enhanced overall system performance
Potential Commercial Applications
Optimized for use in:
- Telecommunications industry
- Aerospace industry
- Defense industry
Possible Prior Art
One possible prior art for this technology could be the use of traditional high frequency switches without the incorporation of capacitors for improved performance.
Unanswered Questions
How does the capacitor specifically enhance the performance of the high frequency switch?
The capacitor is mentioned in the abstract as providing additional functionality, but the specific details of how it improves performance are not elaborated on.
Are there any specific limitations or drawbacks of this SPNT-type high frequency switch technology?
While the benefits and applications are discussed, potential limitations or drawbacks of this technology are not addressed in the abstract.
Original Abstract Submitted
according to an embodiment, an spnt-type high frequency switch includes a plurality of first mos transistors, second mos transistors, and a capacitor. the plurality of first mos transistors are connected in series between one of a plurality of rf terminals and an rf common terminal. the second mos transistors have ends each connected to adjacent first mos transistors among the first mos transistors. the capacitor is connected between ground and another end of a second mos transistor having one end connected to another end of a first mos transistor having one end connected to the one of the rf terminals among the first and second mos transistors.
