Kabushiki kaisha toshiba (20240097671). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

kabushiki kaisha toshiba

Inventor(s)

Toru Sugiyama of Musashino Tokyo (JP)

Noriaki Yoshikawa of Inagi Tokyo (JP)

Yasuhiko Kuriyama of Yokohama Kanagawa (JP)

Akira Yoshioka of Yokohama Kanagawa (JP)

Hitoshi Kobayashi of Yamato Kanagawa (JP)

Hung Hung of Kawasaki Kanagawa (JP)

Yasuhiro Isobe of Ota Tokyo (JP)

Tetsuya Ohno of Yokohama Kanagawa (JP)

Hideki Sekiguchi of Yokohama Kanagawa (JP)

Masaaki Onomura of Setagaya Tokyo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097671 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a first transistor, a first drive circuit with a second transistor, and a second drive circuit with a third transistor. The second and third transistors are connected in series, with a connection node of the two transistors connected to a gate electrode of the first transistor. The transistors are normally-off MOS HEMTs formed in a substrate containing GaN. The first drive circuit charges a parasitic capacitance of the first transistor, while the second drive circuit discharges it.

• First transistor, second transistor, and third transistor are normally-off MOS HEMTs.
• Transistors are formed in a substrate containing GaN.
• Second and third transistors are connected in series.
• Connection node of second and third transistors is connected to gate electrode of first transistor.
• First drive circuit charges parasitic capacitance of first transistor.
• Second drive circuit discharges parasitic capacitance of first transistor.

Potential Applications

The technology described in the patent application could be applied in:

• High-frequency communication devices
• Power amplifiers
• Radar systems

Problems Solved

The technology addresses the following issues:

• Parasitic capacitance in transistors
• Efficient charging and discharging mechanisms

Benefits

The technology offers the following benefits:

• Improved performance of semiconductor devices
• Enhanced efficiency in charging and discharging processes

Potential Commercial Applications

The technology could find applications in:

• Telecommunications industry
• Military and defense sector
• Electronics manufacturing companies

Possible Prior Art

One possible prior art could be the use of GaN in semiconductor devices for high-frequency applications. Another could be the implementation of drive circuits for charging and discharging parasitic capacitance in transistors.

Unanswered Questions

What is the specific frequency range in which this technology operates?

The abstract does not mention the exact frequency range within which the semiconductor device operates. This information could be crucial for understanding the potential applications of the technology.

How does this technology compare to existing solutions in terms of efficiency and performance?

The abstract does not provide a direct comparison between this technology and existing solutions. Understanding the advantages of this innovation over current technologies would be essential for assessing its market potential.

Original Abstract Submitted

a semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. the second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. the first transistor, the second transistor, and the third transistor are normally-off mos hemts formed in a first substrate that includes gan. the first drive circuit charges a parasitic capacitance of the first transistor. the second drive circuit discharges the parasitic capacitance of the first transistor.