Kabushiki kaisha toshiba (20240097045). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yoichi Hori of Himeji Hyogo (JP)
Makoto Mizukami of Ibo Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097045 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple layers and components that work together to form a functional device. Here are some key points to explain the patent/innovation:
- The device consists of a first electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a metal layer, a second electrode, a bonding member, and a conductive member.
- The metal layer forms a Schottky junction with the first semiconductor layer, allowing for efficient electron flow.
- The conductive member, made of a different material from the metal layer, is located between the second semiconductor layer and the metal layer.
- The area ratio of the conductive member directly under the bonding member is higher than in other regions, optimizing the device's performance.
Potential Applications
The semiconductor device could be used in various electronic applications such as power electronics, sensors, and communication devices.
Problems Solved
This technology solves the problem of efficient electron flow and conductivity in semiconductor devices, improving overall performance and reliability.
Benefits
The device offers improved efficiency, reliability, and performance compared to traditional semiconductor devices. It also allows for more precise control of electron flow.
Potential Commercial Applications
- "Innovative Semiconductor Device for Enhanced Performance in Electronics"
Possible Prior Art
There may be prior art related to semiconductor devices with metal layers and Schottky junctions, but further research is needed to identify specific examples.
Unanswered Questions
How does this semiconductor device compare to other similar devices on the market?
This article does not provide a direct comparison between this semiconductor device and other similar devices in terms of performance, cost, or efficiency.
What are the specific materials used in the conductive member and how do they contribute to the device's overall performance?
The article does not provide detailed information on the specific materials used in the conductive member and their individual roles in enhancing the device's performance.
Original Abstract Submitted
a semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type located on the first electrode, a second semiconductor layer of a second conductivity type located on a portion of the first semiconductor layer, a metal layer located on the first and second semiconductor layers, a second electrode located on the metal layer, a bonding member connected to an upper surface of the second electrode, and a conductive member located between the second semiconductor layer and the metal layer. the metal layer has a schottky junction with the first semiconductor layer. the conductive member is made of a different material from the metal layer. an area ratio of the conductive member in a region directly under the bonding member is higher than an area ratio of the conductive member in a region other than the region directly under the bonding member.
