Kabushiki kaisha toshiba (20240097024). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Saya Shimomura of Komatsu Ishikawa (JP)
Hiroaki Katou of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097024 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple regions, electrodes, conductive portions, and insulating portions. The device is designed to control the flow of electrical current through the semiconductor material.
- The device consists of a first electrode, a second electrode, and multiple semiconductor regions.
- There are conductive portions within the semiconductor regions to facilitate the flow of current.
- Insulating portions are present to isolate different regions and prevent unwanted current flow.
- A gate electrode is used to control the flow of current between the semiconductor regions.
Potential Applications
The technology described in this patent application could be used in various electronic devices such as transistors, diodes, and integrated circuits.
Problems Solved
This technology helps in improving the efficiency and performance of semiconductor devices by controlling the flow of current more effectively.
Benefits
The benefits of this technology include increased efficiency, better control over current flow, and improved overall performance of electronic devices.
Potential Commercial Applications
The technology could be applied in the manufacturing of consumer electronics, telecommunications equipment, and industrial machinery.
Possible Prior Art
One possible prior art for this technology could be the development of field-effect transistors and other semiconductor devices with similar structures.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of efficiency and performance?
The article does not provide a direct comparison between this technology and existing semiconductor devices in terms of efficiency and performance.
What are the specific manufacturing processes involved in producing this semiconductor device?
The article does not delve into the specific manufacturing processes involved in producing this semiconductor device.
Original Abstract Submitted
according to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first region, a second region, a third region, a first conductive portion, a second conductive portion, a gate electrode, a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion. the second electrode has a first portion and a second portion extending from the first portion toward the first electrode. the first region is between the first electrode and the second electrode. the second region is between the first region and the second electrode. the third region is between the second semiconductor region and the second electrode. the first conductive portion is in the first semiconductor region. the gate electrode is between the second region and the second portion. the second conductive portion is between the first conductive portion and the gate electrode.
