Kabushiki kaisha toshiba (20240097021). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Takako Motai of Yokohama Kanagawa (JP)
Yoko Iwakaji of Meguro Tokyo (JP)
Kaori Fuse of Yokohama Kanagawa (JP)
Keiko Kawamura of Yokohama Kanagawa (JP)
Kentaro Ichinoseki of Higashimurayama Tokyo (JP)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097021 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor device described in the abstract includes a semiconductor substrate with a cell region and a termination region. The termination region surrounds the cell region and consists of multiple diffusion layers with varying concentrations of a conductive impurity, as well as conductive layers connected to the diffusion layers.
- The semiconductor device has a termination region with multiple diffusion layers containing a conductive impurity, as well as conductive layers connected to these diffusion layers.
- The diffusion layers in the termination region have different concentrations of the conductive impurity, with the outermost layers having lower concentrations.
- The conductive layers in the termination region are electrically connected to the diffusion layers and have outer end portions where some of the diffusion layers are present.
Potential Applications
The technology described in this patent application could be applied in:
- Power semiconductor devices
- High-voltage applications
- Integrated circuits requiring precise control of conductivity levels
Problems Solved
This technology helps address issues such as:
- Improving the efficiency and performance of semiconductor devices
- Enhancing the reliability and stability of integrated circuits
- Reducing power losses in high-voltage applications
Benefits
The benefits of this technology include:
- Enhanced conductivity control
- Improved device efficiency
- Increased reliability and stability in operation
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Power electronics industry
- Semiconductor manufacturing companies
- Research and development in the field of semiconductor devices
Possible Prior Art
One possible prior art related to this technology is the use of diffusion layers with varying impurity concentrations in semiconductor devices to control conductivity levels.
Unanswered Questions
How does this technology compare to existing methods of conductivity control in semiconductor devices?
This article does not provide a direct comparison to existing methods of conductivity control in semiconductor devices. Further research or analysis would be needed to evaluate the advantages and disadvantages of this technology in comparison to other methods.
What are the potential limitations or challenges in implementing this technology on a large scale?
The article does not address potential limitations or challenges in implementing this technology on a large scale. Factors such as manufacturing costs, scalability, and compatibility with existing processes could be important considerations that are not covered in the abstract.
Original Abstract Submitted
a semiconductor device includes a semiconductor substrate, a cell region provided, and a termination region. the termination region surrounds the cell region and includes a plurality of first diffusion layers containing a first conductive impurity, a plurality of second diffusion layers each disposed on an outer side of each of the plurality of first diffusion layers and having a concentration of the first conductive impurity lower than that of the first diffusion layers, and a plurality of conductive layers opposing the first diffusion layers and the second diffusion layers on the front face of the semiconductor substrate, the plurality of conductive layers electrically connected to the first diffusion layers, the plurality of conductive layers each having an outer end portion. on a lower side of the outer end portion, any one of the plurality of second diffusion layers is present.
