Kabushiki kaisha toshiba (20240097020). SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract
Contents
SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097020 titled 'SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
Simplified Explanation
The semiconductor device described in the abstract includes a SiC layer with specific regions and features, such as a trench, gate electrode, n-type and p-type regions, and a first face inclined at a certain angle.
- SiC layer with specific regions and features:
* Includes a trench, gate electrode, n-type and p-type regions. * First face inclined at a specific angle. * Regions extending in different directions within the SiC layer.
- Potential Applications:**
This semiconductor device could be used in high-power electronic devices, such as power converters, inverters, and electric vehicles, due to its unique structure and properties.
- Problems Solved:**
This technology helps improve the efficiency and performance of high-power electronic devices by providing better control and management of electrical currents and voltages.
- Benefits:**
- Enhanced efficiency and performance in high-power electronic devices. - Improved control and management of electrical currents and voltages. - Increased reliability and durability of electronic components.
- Potential Commercial Applications:**
"High-Power Semiconductor Device for Efficient Power Conversion Applications"
- Possible Prior Art:**
One possible prior art could be the use of SiC layers in semiconductor devices for high-power applications, but the specific structure and arrangement of regions described in this patent application may be novel and inventive.
- Unanswered Questions:**
- 1. How does the inclination of the first face impact the overall performance of the semiconductor device?**
The abstract mentions that the first face is inclined at a specific angle, but it does not elaborate on the effects or benefits of this inclination on the device's functionality.
- 2. What specific manufacturing processes are required to create the described structure of the semiconductor device?**
While the abstract provides a general overview of the device's structure, it does not detail the exact steps or techniques needed to manufacture such a device with the specified SiC layer and regions.
Original Abstract Submitted
a semiconductor device of an embodiment includes a sic layer including a first face parallel to first direction and second direction perpendicular to the first direction, a trench extending in the first direction, a gate electrode, an n-type first sic region, a p-type second sic region between the first sic region and the trench, extending in the second direction, an n-type third sic region extending in the second direction, and alternately and repeatedly provided with the second sic region in the first direction, a p-type fourth sic region between the third sic region and the first face, an n-type fifth sic region between the fourth sic region and the first face. the first face is inclined with respect to a (0001) face by 0.1 to 8 degrees in a <11-20> direction, and the first direction is along the <11-20> direction, and the second direction is along a <1-100> direction.
