Kabushiki kaisha toshiba (20240096974). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Takuya Yasutake of Kanazawa Ishikawa (JP)
Hiroaki Katou of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096974 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
A semiconductor device described in the abstract includes various components such as drain electrode, source electrode, semiconductor region, gate electrode, and insulation films with specific dielectric constants.
- Drain electrode, source electrode, and semiconductor region are key components of the device.
- Gate electrode is placed in the semiconductor region through a first insulation film.
- Second insulation film, with a higher dielectric constant, is positioned between the gate electrode and the source electrode.
Potential Applications
The semiconductor device can be used in various electronic applications such as integrated circuits, power electronics, and sensors.
Problems Solved
The device helps in improving the performance and efficiency of electronic devices by providing better insulation and control over the flow of current.
Benefits
- Enhanced performance and efficiency - Improved control over current flow - Higher dielectric constant for better insulation
Potential Commercial Applications
The technology can be utilized in the production of advanced electronic devices, leading to innovations in the fields of consumer electronics, telecommunications, and automotive industries.
Possible Prior Art
Prior art may include similar semiconductor devices with different configurations and materials, but the specific combination of components and dielectric constants as described in this patent application may be unique.
Unanswered Questions
How does the specific dielectric constant of the second insulation film impact the overall performance of the semiconductor device?
The specific dielectric constant of the second insulation film plays a crucial role in determining the efficiency and insulation properties of the device. A higher dielectric constant can lead to better performance, but the exact impact needs further investigation.
Are there any limitations or drawbacks associated with using a second insulation film with a higher dielectric constant?
While a higher dielectric constant can offer advantages in terms of insulation, there may be limitations such as increased capacitance or potential signal interference. Further research is needed to understand the trade-offs involved in using such materials in semiconductor devices.
Original Abstract Submitted
a semiconductor device according to the present embodiment includes a drain electrode, a source electrode, a semiconductor region disposed between the drain electrode and the source electrode, a gate electrode disposed in the semiconductor region via a first insulation film, and a second insulation film disposed between the gate electrode and the source electrode and having a specific dielectric constant higher than a specific dielectric constant of the first insulation film.
