Kabushiki kaisha toshiba (20240096972). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shuhei Tokuyama of Nonoichi Ishikawa (JP)
Tsuyoshi Kachi of Kanazawa Ishikawa (JP)
Toshifumi Nishiguchi of Hakusan Ishikawa (JP)
Hiroaki Katou of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096972 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract consists of multiple semiconductor regions and electrodes arranged in a specific configuration. Here are the key points of the innovation:
- The device includes multiple semiconductor regions of different conductivity types stacked on top of each other.
- It features electrodes positioned within the semiconductor regions and facing each other via insulating films.
- The electrodes are strategically located to interact with specific parts of the semiconductor regions.
- The device is designed to optimize performance and functionality in electronic applications.
Potential Applications
The semiconductor device could be used in various electronic devices such as transistors, diodes, and integrated circuits.
Problems Solved
This technology helps in improving the efficiency and performance of electronic devices by providing a more precise control over the flow of electrical current.
Benefits
The semiconductor device offers enhanced functionality, increased efficiency, and improved performance in electronic applications.
Potential Commercial Applications
The technology could be applied in the manufacturing of advanced electronic devices for consumer electronics, telecommunications, and automotive industries.
Possible Prior Art
One possible prior art could be the development of similar semiconductor devices with different configurations and arrangements to achieve specific functionalities.
Unanswered Questions
How does this semiconductor device compare to existing technologies in terms of performance and efficiency?
The article does not provide a direct comparison with existing technologies to evaluate the performance and efficiency of this semiconductor device.
What are the potential challenges in scaling up the production of this semiconductor device for commercial applications?
The article does not address the potential challenges in scaling up the production of this semiconductor device for mass commercialization.
Original Abstract Submitted
a semiconductor device according to the present embodiment includes: a first electrode; a first semiconductor region of a first conductivity type disposed above the first electrode; a second semiconductor region of a second conductivity type disposed on the first semiconductor region; a third semiconductor region of the first conductivity type disposed on the second semiconductor region; a second electrode disposed in the first semiconductor region; a third electrode facing the second semiconductor region via a second insulating film; a fourth electrode having a portion adjacent to a part of the second semiconductor region and the third semiconductor region in the second direction, the second semiconductor region, and the third semiconductor region; and a fifth electrode disposed in the first insulating film, having a bottom located closer to the first electrode than a bottom of the portion, having a top located on an upper surface of the first insulating film.
