Kabushiki kaisha toshiba (20240096966). SEMICONDUCTOR DEVICE simplified abstract

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SEMICONDUCTOR DEVICE

Organization Name

kabushiki kaisha toshiba

Inventor(s)

Katsuhisa Tanaka of Himeji Hyogo (JP)

Hiroshi Kono of Himeji Hyogo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096966 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes multiple layers and electrodes to facilitate its operation. Here is a simplified explanation of the patent application:

  • The device consists of a first electrode, a second electrode, and a third electrode positioned between the first and second electrodes.
  • It also includes semiconductor layers connected to the electrodes, with different conductivity types and compositions.
  • The third electrode has two portions, and the first semiconductor layer faces one portion through an insulating layer.
  • The carrier concentration of the fourth semiconductor layer is higher than that of the third semiconductor layer.

Potential Applications

The technology described in this patent application could be used in:

  • High-speed electronic devices
  • Power electronics
  • Solar cells

Problems Solved

This technology helps address issues related to:

  • Improving carrier concentration in semiconductor devices
  • Enhancing performance and efficiency of electronic components

Benefits

The benefits of this technology include:

  • Increased conductivity
  • Improved device performance
  • Enhanced overall efficiency

Potential Commercial Applications

The semiconductor device could have commercial applications in:

  • Semiconductor manufacturing industry
  • Electronics industry
  • Renewable energy sector

Possible Prior Art

One possible prior art for this technology could be:

  • Research on semiconductor devices with varying carrier concentrations

Unanswered Questions

How does the carrier concentration affect the overall performance of the semiconductor device?

The carrier concentration plays a crucial role in determining the conductivity and efficiency of the device. Higher carrier concentrations can lead to improved performance, but the exact relationship needs further exploration.

What are the specific advantages of using silicon and carbon in the semiconductor layers?

Silicon and carbon are commonly used in semiconductor devices, but the unique advantages they offer in this particular configuration require more detailed analysis to fully understand their impact on the device's functionality.


Original Abstract Submitted

a semiconductor device includes a first electrode, a second electrode, a third electrode located between the first electrode and the second electrode, a first semiconductor layer connected to the first electrode, a second semiconductor layer connected to the second electrode, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of the second conductivity type. the third electrode includes first and second portions. the first semiconductor layer faces the first portion via an insulating layer. the first and second semiconductor layers are of a first conductivity type and include silicon and carbon. a carrier concentration of the fourth semiconductor layer is greater than a carrier concentration of the third semiconductor layer.