Kabushiki kaisha toshiba (20240096938). SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract

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SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR

Organization Name

kabushiki kaisha toshiba

Inventor(s)

Tatsuo Shimizu of Shinagawa Tokyo (JP)

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096938 titled 'SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR

Simplified Explanation

The semiconductor device described in the abstract includes a silicon carbide layer with specific features such as trenches, gate electrodes, and different regions within the layer.

  • The device has a silicon carbide layer with a first face, first and second trenches, first and second gate electrodes, n-type and p-type silicon carbide regions, and fifth silicon carbide region at the bottom of the trenches.
  • The width of the fourth silicon carbide region is less than the width of the first trench, and the length of the fourth silicon carbide region is more than its width.

Potential Applications

The technology described in this patent application could be applied in:

  • Power electronics
  • High-temperature applications
  • Electric vehicles

Problems Solved

This technology helps in:

  • Improving efficiency in power electronics
  • Enhancing performance in high-temperature environments
  • Increasing the reliability of electronic devices

Benefits

The benefits of this technology include:

  • Higher efficiency
  • Improved thermal performance
  • Enhanced device reliability

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

  • Power semiconductor industry
  • Automotive sector
  • Aerospace industry

Possible Prior Art

One possible prior art related to this technology could be the use of silicon carbide in power electronics for its high-temperature capabilities and efficiency.

Unanswered Questions

How does the width and length of the fourth silicon carbide region impact the overall performance of the semiconductor device?

The width and length of the fourth silicon carbide region play a crucial role in the device's operation, but the specific effects are not detailed in the abstract.

What are the specific manufacturing processes involved in creating the different regions and features within the silicon carbide layer?

The abstract mentions the presence of various regions and features, but it does not elaborate on the specific manufacturing techniques used to achieve them.


Original Abstract Submitted

a semiconductor device of an embodiment includes a silicon carbide layer including a first face parallel to a first direction, a first trench and a second trench extending in the first direction, a first gate electrode in the first trench, a second gate electrode in the second trench, an n-type first silicon carbide region, a p-type second silicon carbide region between the first silicon carbide region and the first face, an n-type third silicon carbide region between the second silicon carbide region and the first face, a p-type fourth silicon carbide region at a bottom of the first trench, and a fifth silicon carbide region at a bottom of the second trench. a width of the fourth silicon carbide region is less than a width of the first trench, and a length of the fourth silicon carbide region is more than the width of the fourth silicon carbide region.

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