Kabushiki kaisha toshiba (20240096702). SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS simplified abstract
Contents
- 1 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
Organization Name
Inventor(s)
Yuta Sugimoto of Kawasaki (JP)
SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096702 titled 'SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
Simplified Explanation
The manufacturing method of a semiconductor apparatus described in the abstract involves forming an electrode on a semiconductor substrate, creating a via hole that penetrates the substrate, forming a rear-side electrode, adding an insulating layer, and forming a solder layer.
- Formation of electrode on first main surface of compound semiconductor substrate
- Creation of via hole through substrate
- Formation of rear-side electrode on second main surface
- Addition of insulating layer above the opening
- Formation of solder layer above rear-side electrode and insulating layer
Potential Applications
The technology described in this patent application could be applied in the manufacturing of various semiconductor devices such as solar cells, LEDs, and power electronics.
Problems Solved
This technology solves the problem of efficiently connecting electrodes on opposite sides of a semiconductor substrate while maintaining structural integrity and electrical conductivity.
Benefits
The benefits of this technology include improved electrical performance, increased reliability, and enhanced manufacturing efficiency for semiconductor devices.
Potential Commercial Applications
The technology described in this patent application could have commercial applications in the semiconductor industry, particularly in the production of high-performance electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar methods in the manufacturing of other semiconductor devices such as photovoltaic cells or power modules.
Unanswered Questions
How does this technology compare to existing methods for connecting electrodes on semiconductor substrates?
This technology offers a more efficient and reliable way to connect electrodes on opposite sides of a semiconductor substrate compared to traditional methods. It allows for a higher ratio of substrate thickness to via hole width, which can improve overall device performance.
What are the potential challenges in scaling up this manufacturing method for mass production?
Scaling up this manufacturing method for mass production may involve challenges such as optimizing process parameters, ensuring uniformity in electrode formation, and maintaining high yields during the manufacturing process. Additional research and development may be needed to address these challenges.
Original Abstract Submitted
a manufacturing method of a semiconductor apparatus according to an embodiment includes forming an electrode on a first main surface of a semiconductor substrate made from a compound semiconductor; forming, at a location where the electrode is formed, a via hole that penetrates the first main surface and a second main surface of the semiconductor substrate, wherein a ratio of a thickness of the semiconductor substrate to a maximum value of a width of an opening in the second main surface is greater than 1; forming a rear-side electrode on a second main surface of the semiconductor substrate in such a manner that the rear-side electrode is electrically coupled to the electrode in the via hole; forming an insulating layer arranged at least a layer above the opening; and forming a solder layer in a layer above the rear-side electrode and the insulating layer.
