Kabushiki kaisha toshiba (20240096380). SEMICONDUCTOR STORAGE DEVICE simplified abstract

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SEMICONDUCTOR STORAGE DEVICE

Organization Name

kabushiki kaisha toshiba

Inventor(s)

Tsuyoshi Midorikawa of Yokohama Kanagawa (JP)

SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096380 titled 'SEMICONDUCTOR STORAGE DEVICE

Simplified Explanation

The semiconductor storage device described in the abstract consists of a first memory circuit, a second memory circuit with smaller storage capacity, a readout line connected to both memory circuits, a sense amplifier to compare voltage levels of signals from each memory circuit, and a readout conditioning circuit to adjust operation timing and reference voltage based on the signals.

  • The semiconductor storage device includes a first memory circuit and a second memory circuit with different storage capacities.
  • A readout line is shared between the two memory circuits for data retrieval.
  • A sense amplifier compares voltage levels of signals from each memory circuit with a reference voltage.
  • A readout conditioning circuit adjusts operation timing and reference voltage based on the signals.

Potential Applications

The technology described in this patent application could be applied in various fields such as:

  • Data storage devices
  • Mobile devices
  • Embedded systems

Problems Solved

This technology addresses the following issues:

  • Efficient use of storage space
  • Improved data retrieval speed
  • Enhanced memory management

Benefits

The benefits of this technology include:

  • Optimal utilization of memory resources
  • Faster data access
  • Enhanced performance in memory-intensive applications

Potential Commercial Applications

The semiconductor storage device could find commercial applications in:

  • Consumer electronics
  • Automotive systems
  • Industrial automation

Possible Prior Art

One possible prior art related to this technology is the use of multi-level cell (MLC) memory in storage devices to increase storage capacity without significantly increasing costs.

Unanswered Questions

1. How does the readout conditioning circuit precisely adjust the operation timing and reference voltage for optimal data retrieval? 2. Are there any potential limitations or drawbacks to using a semiconductor storage device with multiple memory circuits in practical applications?


Original Abstract Submitted

a semiconductor storage device according to an embodiment comprises: a first memory circuit; a second memory circuit having a storage capacity smaller than that of the first memory circuit; a readout line commonly connected to the first memory circuit and the second memory circuit; a sense amplifier configured to compare a voltage of a first bit signal or a second bit signal with a reference voltage, where the first bit signal being inputted from the first memory circuit through the readout line and the second bit signal being inputted from the second memory circuit through the readout line; and a readout conditioning circuit configured to change at least one of an operation timing of the sense amplifier and the reference voltage corresponding to the first bit signal and the second bit signal.