Kabushiki kaisha toshiba (20240094349). LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE simplified abstract
Contents
- 1 LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE
Organization Name
Inventor(s)
Keita Sasaki of Yokohama Kanagawa (JP)
Mariko Shimizu of Setagaya Tokyo (JP)
Kazuhiro Suzuki of Meguro Tokyo (JP)
LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240094349 titled 'LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE
Simplified Explanation
The abstract describes a light detector with a unique structure involving multiple semiconductor layers and a photoelectric conversion part.
- The light detector includes a substrate with a first semiconductor layer, an insulating layer, and a second semiconductor layer.
- The photoelectric conversion part within the second semiconductor layer consists of a first semiconductor region and a second semiconductor region.
- A void and a trench are present in the substrate, with the void positioned below the photoelectric conversion part and the trench surrounding it.
- The photoelectric conversion part is electrically connected to the upper surface side of the substrate via a portion below the trench.
Potential Applications
This technology can be applied in:
- Solar panels
- Photodetectors
- Image sensors
Problems Solved
This technology helps in:
- Improving light detection efficiency
- Enhancing photoelectric conversion capabilities
Benefits
The benefits of this technology include:
- Higher sensitivity to light
- Improved performance in low-light conditions
Potential Commercial Applications
The potential commercial applications of this technology include:
- Consumer electronics
- Aerospace industry
- Medical devices
Possible Prior Art
One possible prior art for this technology could be the use of similar semiconductor layer structures in photovoltaic cells.
Unanswered Questions
How does the size of the void and trench affect the performance of the light detector?
The abstract does not provide information on how the dimensions of the void and trench impact the functionality of the light detector.
What materials are used in the fabrication of the semiconductor layers?
The abstract does not specify the materials used in the first and second semiconductor layers.
Original Abstract Submitted
a light detector according to one embodiment, includes a substrate. the substrate includes a first semiconductor layer, an insulating layer, and a second semiconductor layer. the insulating layer is located on the first semiconductor layer. the second semiconductor layer is located on the insulating layer. the second semiconductor layer includes a photoelectric conversion part. the photoelectric conversion part includes a first semiconductor region and a second semiconductor region. the substrate includes a void and a trench. the void is positioned below the photoelectric conversion part and between the first semiconductor layer and the second semiconductor layer. the trench surrounds the photoelectric conversion part. a lower end of the trench is positioned in the second semiconductor layer. the photoelectric conversion part is electrically connected with an upper surface side of the substrate via a portion below the trench.
