View source for International business machines corporation (20240136287). Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract

=Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits=


==Organization Name==

[[:Category:international business machines corporation|international business machines corporation]]


[[Category:international business machines corporation]]

==Inventor(s)==

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Nicholas Anthony Lanzillo of Wynantskill NY (US)|Nicholas Anthony Lanzillo of Wynantskill NY (US)]][[Category:Nicholas Anthony Lanzillo of Wynantskill NY (US)]]

[[:Category:Lawrence A. Clevenger of Saratoga Springs NY (US)|Lawrence A. Clevenger of Saratoga Springs NY (US)]][[Category:Lawrence A. Clevenger of Saratoga Springs NY (US)]]

[[:Category:Hosadurga Shobha of Niskayuna NY (US)|Hosadurga Shobha of Niskayuna NY (US)]][[Category:Hosadurga Shobha of Niskayuna NY (US)]]

[[:Category:Huai Huang of Clifton Park NY (US)|Huai Huang of Clifton Park NY (US)]][[Category:Huai Huang of Clifton Park NY (US)]]

==Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240136287 titled 'Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits

==Simplified Explanation==

The integrated circuit structure described in the patent application includes a power supply rail formed in the backside of a semiconductor wafer, connected to a frontside BEOL wire layer through a gate that can be powered off by a power supply coupled through the gate from the power supply rail.

* Power supply rail formed in the backside of a semiconductor wafer
* Gate in the semiconductor wafer
* Frontside BEOL wire layer connected to the power supply rail through the gate

**Potential Applications:**

- Power management in integrated circuits
- Improved efficiency in power distribution within semiconductor devices

**Problems Solved:**

- Efficient power supply distribution
- Reduction of power consumption in integrated circuits

**Benefits:**

- Enhanced performance of integrated circuits
- Increased reliability in power supply distribution

**Potential Commercial Applications:**

*Optimizing Power Supply Distribution in Semiconductor Devices*

**Possible Prior Art:**

There may be prior art related to power supply distribution in integrated circuits, but specific examples are not provided in the abstract.

**Unanswered Questions:**

1. How does the gate function to control the power supply distribution?
2. What specific types of integrated circuits would benefit most from this technology?


==Original Abstract Submitted==

an integrated circuit structure includes a power supply rail formed in a backside of a semiconductor wafer. the integrated circuit structure also includes a frontside beol wire layer connected to the power supply rail through a gate, wherein the gate is of a type to be powered off by a power supply coupled through the gate from the power supply rail to the first frontside beol wire layer. a method of forming an integrated circuit structure includes forming a power supply rail in a backside of a semiconductor wafer, forming a gate in the semiconductor wafer, and forming a frontside beol wire layer connected to the power supply rail through the gate. again, the gate is of a type to be powered off by a power supply coupled through the gate from the power supply rail to the first frontside beol wire layer.



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