International business machines corporation (20240135223). ISOLATED BOTTOM CORNER GATES FOR SPIN-QUBITS IN A FIN simplified abstract

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ISOLATED BOTTOM CORNER GATES FOR SPIN-QUBITS IN A FIN

Organization Name

international business machines corporation

Inventor(s)

Felix Julian Schupp of Adliswil (CH)

Noelia Vico Trivino of Zurich (CH)

Matthias Mergenthaler of Zurich (CH)

Andreas Fuhrer Janett of Rueschlikon (CH)

ISOLATED BOTTOM CORNER GATES FOR SPIN-QUBITS IN A FIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240135223 titled 'ISOLATED BOTTOM CORNER GATES FOR SPIN-QUBITS IN A FIN

Simplified Explanation

The abstract describes a qubit device with isolated bottom corner gates on a semiconductor fin structure for quantum dot control.

  • Semiconductor substrate with a semiconductor fin perpendicular to the top surface.
  • First gate at one corner of the fin, second gate at the opposite corner, both controlling a quantum dot near the top of the fin.
  • Third gate at the first corner with a contact for charge transport to a second quantum dot near the bottom of the fin.
  • Gates are electrically isolated and used for precise control of quantum dots.

Potential Applications

This technology can be applied in quantum computing, quantum communication, and quantum sensing.

Problems Solved

This innovation solves the challenge of precise control and manipulation of quantum dots in qubit devices.

Benefits

The use of isolated bottom corner gates allows for more accurate and efficient control of quantum dots, leading to improved qubit performance.

Potential Commercial Applications

Potential commercial applications include quantum computers, quantum sensors, and other quantum technology devices.

Possible Prior Art

Prior art may include similar qubit devices with different gate configurations or control mechanisms.

Unanswered Questions

How does this technology compare to other qubit devices in terms of scalability and performance?

This article does not provide a direct comparison with other qubit devices in terms of scalability and performance.

What are the potential challenges in scaling up this technology for practical applications?

The article does not address the potential challenges in scaling up this technology for practical applications.


Original Abstract Submitted

a qubit device or system having isolated bottom corner gates includes a semiconductor substrate and a semiconductor fin perpendicularly adjoining a top surface of the substrate. the qubit device also includes a first gate located at a first corner between a first side of the fin and the top surface of the substrate, and a second gate located at a second corner between a second, opposite side of the fin and the top surface of the substrate. the first and second gates are electrically isolated from each other and used to control a first quantum dot near the top of the fin. a third gate located at the first corner has a contact for accumulating a channel to facilitate charge transport to and from a second quantum dot located near the bottom of the fin accumulated using the first and second gates.

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